Morphological and structural properties of neutron-irradiated B₁₂C₃ boron carbide microcrystals

Combustion synthesized boron carbide powders by different organic carbon sources and microwave absorbing properties

“…Boron carbide (B 4 C) is a semiconductor with the potential as a high-temperature absorber due to its low density (2.5 g/cm 3 ), high hardness (second only to diamond and cubic boron nitride), narrow bandgap (2.09 eV), high melting point (2450 • C), good high-temperature stability, excellent oxidation resistance, and so on. [15][16][17] However, research on the microwave absorbing properties of B 4 C mainly focuses on the composites of boron carbide with carbon materials (graphene, 18 amorphous C, 19 activated carbon felt 20 ) and ceramic materials (Al 2 O 3 , 21 SiC, 22 and FeB 23 ). Typically, carbon materials (carbon black, carbon nanotubes, etc.)…”