“…If the depletion layer is very thin, photons can penetrate beyond this layer and light will be absorbed in the bulk semiconductor, where the electrical field is absent [4,16,54,55]. The lack of an electrical field prevents the photo-excited electron-hole pairs from being effectively separated, thus increasing the probability of recombination [4,16,27,54]. Furthermore, oxygen vacancies in TiO 2 have been found to act as recombination centers for electron and holes, playing a critical role in the trapping process: an excess of oxygen vacancies will result in more photogenerated electrons being trapped thus decreasing their contribution to the photoelectrochemical processes [37,56,57].…”