Morphological evidence for surface pre-melting on Si(111)

Ignatescu, Valerian; Blakely, J. M.

doi:10.1016/j.susc.2007.09.013

Cited by 12 publications

(4 citation statements)

References 71 publications

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“…It is known that surface melting of Si takes place in the range of 1200 °C-1300 °C. 27,28) which is below the melting point of 1414 °C for bulk Si, 29) since the Si atoms at the surface area in the bonding states weaker than those in the bulk. The melted Si layers in the 1200 °C-1300 °C range easily flowed along the current direction via electromigration.…”

Section: Resultsmentioning

confidence: 99%

Silicon protrusions with caps containing precipitates of iron silicides fabricated via liquid-phase epitaxy under a temperature distribution with a local maximum caused by applied tensile stress

Nishimura

Tomitori

2020

Jpn. J. Appl. Phys.

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Silicon (Si) protrusions containing iron (Fe) silicides were fabricated in a process of surface melting and solidifying. Si(001) and Si(111) pieces with Fe depositions were heated at 1250 °C under a local tensile stress of ∼2 GPa. This surface stress locally increased the surface temperature through DC heating. The Si atoms in the melting surface region with Fe flowed to the lower temperature region via electromigration, and they turned into a single-crystal Si protrusion with caps at its top, including the single-crystal Fe silicide precipitates. The sizes of the protrusion, the caps, and the precipitates depended on the amount of Fe deposition. Additional small side protrusions were found on the sides of the protrusions on the Si(001) surface but not on the Si(111) surface. These results indicate that the surface fine structures and composition can be controlled by changing the surface crystal orientation and deposition metal without lithographic approaches.

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Section: Resultsmentioning

confidence: 99%

Silicon protrusions with caps containing precipitates of iron silicides fabricated via liquid-phase epitaxy under a temperature distribution with a local maximum caused by applied tensile stress

Nishimura

Tomitori

2020

Jpn. J. Appl. Phys.

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“…3), heated at higher temperatures began to melt first. It is known that surface melting of Si takes place in the range of 1200 °C-1300 °C, [20][21][22] which is below the melting point of 1414 °C for bulk Si, 23) because the Si atoms at the surface are in the different states of bonding from those in the bulk, resulted in large thermal vibration. The number of melted layers was estimated to be about 5 layers at 1230 °C.…”

Section: Resultsmentioning

confidence: 99%

Microanalysis of silicon protrusions with a titanium cap formed via surface melting and solidification under applied tensile stress

Nishimura

Tomitori

2019

Jpn. J. Appl. Phys.

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Silicon (Si) protrusions with a peculiar-shaped cap at their top were microanalyzed using scanning electron microscopy (SEM) with electron backscatter diffraction (EBSD) and scanning Auger electron spectroscopy/microscopy. The Si protrusions were formed on a Si(111) substrate via the process of surface melting by DC resistive heating above 1000 °C and solidification under applied tensile stress. The protrusions were micro-sampled by the techniques with focused ion beam, and their cross-sectioned planes were examined by SEM with EBSD. The analysis revealed that the Si protrusions were epitaxially grown as a single crystal on the Si(111) substrate and deposition of titanium (Ti) resulted in formation of the cap as Ti precipitation with other minor impurities. The formation mechanism of the Si protrusion was discussed in terms of surface melting flow in the non-uniform temperature distribution under stress via electromigration, diffusion suppression due to stress-induced steps, and solidification including freezing point depression of the melted Si with the impurities.

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“…Для учeта влияния процессов зарождения в уравнение (1) следует добавить дополнительный параметр h 0 tν 2 , где ν 2 -частота зарождения вакансионных островков. Уравнение (1) примет следующий вид: ностного плавления кристалла кремния при температурах подложки выше 1290 • С [23,24]. Авторы данных работ предполагают наличие новой поверхностной фазы с соответствующими иными энергетическими параметрами, определяющими как массоперенос по поверхности, так и десорбцию материала с поверхности в вакуум.…”

Section: обсуждение результатовunclassified

Эволюция микролунок на широких террасах поверхности Si(111) в процессе высокотемпературного отжига

Петров¹,

Ситников²,

Косолобов³

et al. 2019

Журнал Технической Физики

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We have investigated in situ the morphological transformation of the Si(111) surfaces with micro-pits at large terraces during high-temperature annealing at T = 1200–1400°C. Experimental observation of the micro-pits kinetic decay have been performed by means of ultrahigh vacuum reflection electron microscopy. Focused ion beam system have been used for micro-pits creation at Si(111) terraces of large size. We have found that kinetic of micro-pit decay processes is affected by two dimensional vacancy islands nucleation at the micro-pit bottom when the micro-pit reaches the critical lateral size. The simple theoretical model has been proposed for describing the changes of the lateral size of micro-pit. The temperature dependence of two-dimensional vacancy islands nucleation frequency at micro-pit bottom is found to be described by the activation energy of 4.1 ± 0.1 eV.

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Morphological evidence for surface pre-melting on Si(111)

Cited by 12 publications

References 71 publications

Silicon protrusions with caps containing precipitates of iron silicides fabricated via liquid-phase epitaxy under a temperature distribution with a local maximum caused by applied tensile stress

Silicon protrusions with caps containing precipitates of iron silicides fabricated via liquid-phase epitaxy under a temperature distribution with a local maximum caused by applied tensile stress

Microanalysis of silicon protrusions with a titanium cap formed via surface melting and solidification under applied tensile stress

Эволюция микролунок на широких террасах поверхности Si(111) в процессе высокотемпературного отжига

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