2004
DOI: 10.1002/sia.1662
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Morphological evolution of erbium disilicide nanowires on Si(001)

Abstract: The morphological evolution of ErSi 2 nanowires on Si(001) with Er coverage was investigated by scanning tunnelling microscopy, low-energy electron diffraction and x-ray diffraction. At low Er coverages, elongated ErSi 2 nanowires in a hexagonal crystal structure are formed. The nanowires are exclusively oriented perpendicular to the dimer rows of the Si(001) substrate, thus suggesting a method to control the nanowire arrangement via the substrate configuration. At 3 ML of Er rectangular islands with flat tops… Show more

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Cited by 9 publications
(5 citation statements)
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“…Scanning tunneling microscopy (STM) images of DySi 2 nanowires on the p-type Si(001) surface before and after Au deposition are shown in Figure a and b, respectively. In Figure a, we show that the DySi 2 nanowire surface before Au deposition exhibits a c(2 × 2) reconstruction, as was also observed by others for DySi 2 and ErSi 2 nanostructures. Meanwhile, the neighboring regions comprise both (2 × 1) reconstructed Si(001) surface manifested by Si dimer rows and complex Dy−Si metal reconstructed regions.…”
Section: Resultssupporting
confidence: 84%
“…Scanning tunneling microscopy (STM) images of DySi 2 nanowires on the p-type Si(001) surface before and after Au deposition are shown in Figure a and b, respectively. In Figure a, we show that the DySi 2 nanowire surface before Au deposition exhibits a c(2 × 2) reconstruction, as was also observed by others for DySi 2 and ErSi 2 nanostructures. Meanwhile, the neighboring regions comprise both (2 × 1) reconstructed Si(001) surface manifested by Si dimer rows and complex Dy−Si metal reconstructed regions.…”
Section: Resultssupporting
confidence: 84%
“…5(b) and (c), respectively. A variety of other nanowire surface reconstructions have been observed, such as p(1 × 1) and c(2 × 2), for DySi 2 − x [10,48] and ErSi 2 − x [50] nanowires. These may be due to Si vacancies, which are thought to reduce the strain caused by lattice mismatch [46].…”
Section: Resultsmentioning
confidence: 99%
“…A major impetus for such studies is the search for new, cost effective methods to fabricate nanometer scale electronic devices. One system that has been investigated for this purpose is rare-earth (RE) silicides on the Si(1 1 1) [1][2][3] and Si(0 0 1) [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] surfaces. As first shown by Preinesberger et al [4], nanowires form in the initial growth stages of silicide overlayers for many RE metals, including: Dy [3][4][5][6][7][8][9][10], Er [5][6][7][11][12][13][14], Ho [6,9,15], Gd [1,2,7,16], Sc [7], Yb [17], Sm [5]...…”
Section: Introductionmentioning
confidence: 99%