Morphological investigation of aluminium nitride films on various substrates for MEMS applications

Kar, Jyoti Prakash; Bose, G.; Tuli, Shreshth; Myoung, Jae Min; Mukherjee, Shaibal

doi:10.1179/174329408x326407

Cited by 8 publications

(8 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the Gibbs free energy for reaction (1) is lower than that for reaction (2) in the temperature interval investigated [17]. Furthermore, the water content, or humidity level, in the oxidation environment of the present study is very low.…”

Section: Discussionmentioning

confidence: 72%

See 1 more Smart Citation

Oxidation mechanism of aluminum nitride revisited

Yeh

Tuan

2017

J Adv Ceram

View full text Add to dashboard Cite

Different from the oxidation kinetics of other nitrides, the oxide layer on AlN can easily reach tens of micrometers at a temperature above 1200 ℃. In the present study, the oxidation mechanism of AlN is investigated through microstructure observation. The analysis indicates that the oxide layer is full of small pores. The formation of pores generates additional surface area to induce further reaction. The reaction thus controls the oxidation in the temperature range from 1050 to 1350 ℃. The oxidation rate becomes slow as the oxide layer reaches a critical thickness.

show abstract

Section: Discussionmentioning

confidence: 72%

“…With the increasing demand for the miniaturization of consumer electronics, AlN has come to be used as a carrier for electronic components [2]. Prior to the bonding of electronic components, a surface modification of the AlN substrate is usually needed [3,4].…”

Section: Introductionmentioning

confidence: 99%

Oxidation mechanism of aluminum nitride revisited

Yeh

Tuan

2017

J Adv Ceram

View full text Add to dashboard Cite

show abstract

“…However, a systematic investigation is required for the detail elemental analysis, which is the scope of future research. Three peaks, appeared at about 1090, 820 and 465 cm −1 , are attributed to the stretching, bending and rocking mode of the Si-O-Si group, respectively [33,34]. It is expected that the annealing of all the CCTO films at 950 °C in air ambient may give rise to the formation of an interfacial SiO 2 layer.…”

Section: Resultsmentioning

confidence: 96%

Effect of RF sputtering power on morphological and electrical properties of calcium copper titanate thin films

Tripathy

Das

Ghosh

et al. 2017

J Mater Sci: Mater Electron

Self Cite

View full text Add to dashboard Cite

dielectric constant, but these are limited to low temperature applications. Beyond the Curie temperature (T c ) their dielectric properties decreases dramatically, which is undesirable for device applications. Recently, CaCu 3 Ti 4 O 12 (CCTO), possessing a distorted cubic perovskite structure, has received intensive consideration due to its extraordinary dielectric behavior [7]. The dielectric constant of CCTO ceramics is in the order of 10 5 over a broad range of temperature due to its stable cubic structure [8] and also no lattice distortion has been observed in CCTO between this temperature range as confirmed by neutron diffraction and high resolution X-ray diffraction [7,8]. The origin of high permittivity in CCTO is still under debate. High dielectric behavior is the common feature in ferroelectric materials. In case of CCTO, the contribution from dipoles has been ruled out due to its centrosymmetry nature even at low temperature [7,8]. The internal barrier layer mechanism is widely accepted for explanation of giant dielectric permittivity in CCTO, where the conducting grains are separated by insulating grain boundaries [9]. Application of CCTO in microelectronics for memory devices, sensors, capacitor and varistors demands the deposition of CCTO thin films on silicon substrate.Due to the unique dielectric behavior of CCTO bulk ceramics, many research groups have initiated deposition of CCTO thin films by different deposition techniques [10-16] on various types of substrates [17][18][19]. Sputtering is considered as one of the most promising deposition technique for thin film deposition [20]. There are very few reports of deposition of CCTO thin film by RF sputtering [12,21]. Sputtering parameters like RF power, deposition pressure, substrate temperature strongly influence the structural, morphological and electrical properties of thin films. In our previous work [22], we have deposited CCTO thin film with the variation of deposition pressure on silicon Abstract Calcium copper titanate (CCTO) thin films were deposited on p-type silicon substrate by RF magnetron sputtering at various RF powers. Post deposition annealing was carried out for all the samples at 950 °C for 1 h in air atmosphere. Various types of surface morphology have been observed for CCTO thin films with the variation of RF power. The evolution of polycrystalline structure of the CCTO thin films was confirmed by XRD studies. The FTIR characteristic absorption band of CCTO was observed in the range of 400-700 cm −1 . The capacitancevoltage (C-V) and current-voltage (I-V) characteristics of the films were investigated employing Al/CCTO/Si MOS capacitors. CCTO films with higher dielectric constant, lower oxide and interface charge density were obtained at higher RF power. Leakage current was also found to be minimum for RF power of 105 W.

show abstract

“…[1][2][3][4][5][6] It is of great importance to analyse its behaviour theoretically because the experimental process optimisation frequently is very expensive.…”

Section: Introductionmentioning

confidence: 99%

“…Applied across many industries, the reactive sputtering process draws very significant practical interest. [1][2][3][4][5][6] It is of great importance to analyse its behaviour theoretically because the experimental process optimisation frequently is very expensive.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic model of reactive sputtering process

Faddeeva

Oseguera

2012

Surface Engineering

View full text Add to dashboard Cite

A new approach in describing the reactive sputtering process is developed by applying a mass balance and the first and second laws of thermodynamics. The developed model involves macroparameters versus microparameters involved in the widely accepted model of Berg et al. The hysteresis loop produced during the PVD process is explained using this new approach. The numerical simulations of the Ti reactive sputtering process in the presence of N 2 and the Al reactive sputtering process in the presence of O 2 in an Ar atmosphere are performed, and the results are compared to the experimental data reported in the literature.

show abstract

Morphological investigation of aluminium nitride films on various substrates for MEMS applications

Cited by 8 publications

References 27 publications

Oxidation mechanism of aluminum nitride revisited

Oxidation mechanism of aluminum nitride revisited

Effect of RF sputtering power on morphological and electrical properties of calcium copper titanate thin films

Thermodynamic model of reactive sputtering process

Contact Info

Product

Resources

About