2006
DOI: 10.1007/s10853-005-5638-9
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Morphology and diameter controllable synthesis of boron nanowires

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Cited by 16 publications
(12 citation statements)
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References 27 publications
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“…Yang et al [ 111 ] demonstrated control over the morphology and diameter of amorphous boron nanowires, in CVD with VLS growth on silicon substrates, by altering the growth temperature and the thickness of the catalyst Au films on the substrate. A mixture of nitrogen, hydrogen, and diborane with a flow ratio of 10:50:1 was introduced in the quartz tube with Au-coated Si substrate at 750–1000 °C and 5 × 10 4 Pa for 5 hours.…”
Section: One-dimensional (1d) Boron Nanomaterialsmentioning
confidence: 99%
See 1 more Smart Citation
“…Yang et al [ 111 ] demonstrated control over the morphology and diameter of amorphous boron nanowires, in CVD with VLS growth on silicon substrates, by altering the growth temperature and the thickness of the catalyst Au films on the substrate. A mixture of nitrogen, hydrogen, and diborane with a flow ratio of 10:50:1 was introduced in the quartz tube with Au-coated Si substrate at 750–1000 °C and 5 × 10 4 Pa for 5 hours.…”
Section: One-dimensional (1d) Boron Nanomaterialsmentioning
confidence: 99%
“…On the other hand, in 2008, rhombohedral crystalline boron nanobelts with a [ 111 ] growth direction and amorphous boron nanobelts were synthesized separately by controlling the condition of the method with a vapor-liquid-solid technique by Ni and Li [ 137 ]. Here, a mixture of boron, silicon, and iodine powders with the weight ratio 40:1:1 was placed into a smaller quartz boat and placed at one end of a quartz tube of diameter 19.05 mm, while a single crystal Si(100) substrate was placed at the other end of the tube after coating with a 3- or 20-nm Au film (the former was used for crystalline boron nanobelt growth and the latter was used for amorphous boron nanobelt growth).…”
Section: One-dimensional (1d) Boron Nanomaterialsmentioning
confidence: 99%
“…10 Morphology and diameter controllable boron nanowires were synthesized by means of CVD on Si substrate with diborane through controlling the growth temperature and the thickness of catalyst (Au) films. 11 Boron nanowires with smooth surfaces were fabricated in the temperature range 800-900 °C and the diameter increased slightly with increasing growth temperature. Amorphous boron nanowires have been prepared by CVD on Au-coated MgO substrates in the presence of Si 12 and radio frequency magnetron sputtering of boron powder onto Si.…”
Section: Introductionmentioning
confidence: 99%
“…Yang et al [81] demonstrated growth of boron nanowires from VLS deposition of diborane at 900 °C (Fig 4 .31); this is similar to the 1000 °C annealing performed for the synthesis of 3K-0235, with diborane an expected product of decaborane's decomposition [58]. This work utilized Au catalysts, but Fe is commonly utilized in the VLS growth of carbon nanotubes [82], so the efficacy observed here is not overtly surprising.…”
Section: Chemical Analysis: Ftirsupporting
confidence: 67%