Morphology and optical analysis of defect levels in ultrasonically-sprayed zinc tin oxide thin films

Futuristic electron transport layer based on multifunctional interactions of ZnO/TCNE for stable inverted organic solar cells

“…This energy band position enables ZnO to play a signicant role in electron collection and hole blocking. 21 A variety of low-temperature and solution-based fabrication methods have been demonstrated to deposit ZnO as ETL. 22 Despite the advantages of ZnO as ETL, surcial defects on ZnO thin-lm can behave as recombination centers for photogenerated charge carriers, causing signicant harm in both photovoltage and photocurrent, thus worsening the performance of devices.…”

Impact of Deposition Rate on the Structural, Optical, and Electrical Properties of Zinc Oxide (ZnO) Thin Films Prepared by Solar Spray Pyrolysis Method

“…Figure 5 shows a variation of (Ah) 2 as a function of (h) used to inferring optical band gap E g . The Urbach tail energy (E u ) is expressed from the following relation [20]:…”

Spray-Deposited Aluminum-Doped Zinc Oxide as an Efficient Electron Transport Layer for Inverted Organic Solar Cells

“…Zinc oxide (ZnO) is one of the most common transparent metal oxides that has been employed as the electron transport layer material in IOSCs due to its higher electron mobility, non-toxicity, solution processability, optical transparency, and enhanced electrical properties. The electron affinity and ionization energy of ZnO are ∼4.3 and 7.8 eV, respectively, which facilitates both hole blocking and electron extraction . The electron affinity of ZnO is also matched with the lowest unoccupied molecular orbital (LUMO) levels of many common polymers used in OSCs. , …”

“…The electron affinity and ionization energy of ZnO are ∼4.3 and 7.8 eV, respectively, which facilitates both hole blocking and electron extraction. 12 The electron affinity of ZnO is also matched with the lowest unoccupied molecular orbital (LUMO) levels of many common polymers used in OSCs. 13,14 However, ZnO is associated with defect states, resulting in nonradiative charge carrier recombination losses, and hence detrimental to the device performance.…”