Morphology and Selected Properties of Core/Shell ZnTe-Based Nanowire Structures Containing ZnO

Abstract

We report on an approach to fabricate ZnTe-based core/shell radial heterostructures containing ZnO, as well as on some of their physical properties. The molecular beam epitaxy grown ZnTe nanowires constituted the core of the investigated structures and the ZnO shells were obtained by thermal oxidation of ZnTe NWs. The influence of the parameters characterizing the oxidation process on selected properties of core/shell NWs were examined. Scanning electron microscopy revealed changes of the NWs morphology for various conditions of the oxidation process. X-ray diffraction, high resolution transmission electron microscopy, and Raman scattering measurements were applied to reveal the presence of ZnTe single crystal core and polycrystalline ZnO-shell of investigated structure.

Oxidation of MBE-Grown ZnTe and ZnTe/Zn Nanowires and Their Structural Properties

“…There exist many approaches to fabrication of 1D ZnTe/ZnO heterostructures, (most of them combine two different growth techniques), such as chemical vapor deposition (CVD) growth of ZnO NWs, followed by ZnTe coverage by metal-organic CVD [14]; molecular beam epitaxy (MBE) growth of ZnTe NWs, followed by ZnO coverage by the atomic layer deposition [20,21]; vapor phase transport growth of ZnO nanorods followed by ZnTe coverage by RF magnetron sputtering [19]; electrochemical deposition approach for production both, the core and the shell compounds [17] or a partial oxidation of ZnTe NWs [18,22].…”

ZnTe nanowires overgrown by atomic layer deposited (Zn,Co) oxides: Raman scattering studies

“…One of the ways to improve NWs based devices is fabrication of nano-heterostructures such as radial structures consisting of a core and a shell built from two different materials providing function integration and novel applications [1][2][3][4]. Since ZnTe with its high band gap of 2.26 eV and easy p-type doping is a very attractive candidate for optoelectronic application it is very interesting to combine this material with other semiconductors, for example magnetic oxides.…”