Morphology and Structural Properties of &lt;I&gt;a&lt;/I&gt;-Si:H and &lt;I&gt;a&lt;/I&gt;-SiC:H Films Controlled in Nanoscale

Manakov, S. M.; Taurbayev, T. I.

doi:10.1166/jno.2012.1402

Cited by 3 publications

(3 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The former belongs to the symmetric stretching of Si—H bonds . The second is ascribed to the phonon mode of Si—Si bonds . The sharp Raman peak at 517 cm −1 indicates that the sample “1:0” prepared without CH 4 is highly crystallized.…”

Section: Resultsmentioning

confidence: 98%

Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond

Remeš

Stuchlı́k

Dragounová

et al. 2019

Physica Status Solidi (a)

View full text Add to dashboard Cite

Hydrogenated amorphous substoichiometric silicon carbide (a-Si 1Àx C x :H, x < 0,1) thin films and diodes with low carbon content are prepared from a mixture of H 2 , SiH 4 , and CH 4 by plasma-enhanced chemical vapor deposition at a relatively high temperature of 400 C on semi-transparent boron-doped nanocrystalline diamond (B-NCD) electrodes with an underlying Ti grid. Vibration spectra indicate that CH 4 prevents Si crystallization at elevated deposition temperatures and confirm an increasing carbon content up to x ¼ 0.1 for samples grown with SiH 4 /CH 4 flows up to 1:3. Dark current-voltage characteristics of B-NCD/a-Si 1Àx C x :H diodes show a rectifying ratio of about four orders at AE1 V. However, under white light illumination, an energy conversion efficiency of 4% is limited by a high serial resistivity of the B-NCD electrode and S-shaped photocurrent near the open-circuit voltage.

show abstract

Section: Resultsmentioning

confidence: 98%

Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond

Remeš

Stuchlı́k

Dragounová

et al. 2019

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Notably, the position and intensity of the TO 1 band are sensitive to the short-range disorder in the films. The formation of a strongly disordered Si phase as a result of laser irradiation is also indicated by the appearance of bands attributed to the Si–Si transverse acoustic (TA, 165 cm –1 ) and longitudinal acoustic (LA, 300 cm –1 ) modes (Figure b) . Moreover, the increase of pulse fluence results in the rise of the relative intensity of the bands related to nanocrystalline/amorphous silicon species, thus confirming the more significant disorder of recrystallized Si phases.…”

Section: Resultsmentioning

confidence: 71%

“…The formation of a strongly disordered Si phase as a result of laser irradiation is also indicated by the appearance of bands attributed to the Si−Si transverse acoustic (TA, 165 cm −1 ) and longitudinal acoustic (LA, 300 cm −1 ) modes (Figure 5b). 39 Moreover, the increase of pulse fluence results in the rise of the relative intensity of the bands related to nanocrystalline/amorphous silicon species, thus confirming the more significant disorder of recrystallized Si phases. The higher pulse energy results in more efficient material melting, higher temperature of the plasma formed from the substrate and the organic solvent, and more turbulent processes occurring near the surface, thus resulting in an increased disorder in the resolidified silicon species.…”

Section: ■ Results and Discussionmentioning

confidence: 89%

Reducing the Cut-In Voltage of a Silicon Carbide/p-Silicon Heterojunction Diode Using Femtosecond Laser Ablation

Ali

Piątkowski

Alawadhi

et al. 2022

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

We report on the fabrication of a low-cut-in voltage (a-SiC:H/Si) heterojunction diode using femtosecond laser ablation of silicon wafers in an octane environment. The femtosecond laser-induced plasma simultaneously reduces, carburizes, and hydrogenates the p-type silicon to develop a layer of hydrogenated silicon carbide (a-SiC:H) on top of the p-Si substrate. No reactive gases, source targets, dopants, or diffusion furnaces are required. The obtained current–voltage characteristics of the a-SiC:H/Si diode exhibit a cut-in voltage of 0.16 V, which is significantly lower than the rise potential of a typical SiC Schottky diode (0.75–1.6 eV) or the barrier potential (0.9–1 eV) of a typical p-Si/n-SiC diode. Moreover, this value is far less than the standard cut-in voltage of Si (0.7 V), or the typical body diode SiC MOSFETs (∼3 V). The achieved low cut-in voltage and the modest rectification ratio of the femtosecond laser-fabricated heterojunction diode demonstrate the promising potential of a rapid, facile, and cost-effective method for manufacturing efficient electronic devices.

show abstract

SiC_xN_y:Fe films as a tunable ferromagnetic material with tailored conductivity

et al. 2019

View full text Add to dashboard Cite

show abstract

Morphology and Structural Properties of <I>a</I>-Si:H and <I>a</I>-SiC:H Films Controlled in Nanoscale

Cited by 3 publications

References 0 publications

Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond

Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond

Reducing the Cut-In Voltage of a Silicon Carbide/p-Silicon Heterojunction Diode Using Femtosecond Laser Ablation

SiC_xN_y:Fe films as a tunable ferromagnetic material with tailored conductivity

Contact Info

Product

Resources

About

Morphology and Structural Properties of <I>a</I>-Si:H and <I>a</I>-SiC:H Films Controlled in Nanoscale

Cited by 3 publications

References 0 publications

Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond

Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond

Reducing the Cut-In Voltage of a Silicon Carbide/p-Silicon Heterojunction Diode Using Femtosecond Laser Ablation

SiCxNy:Fe films as a tunable ferromagnetic material with tailored conductivity

Contact Info

Product

Resources

About

SiC_xN_y:Fe films as a tunable ferromagnetic material with tailored conductivity