Morphology control of perovskite light-emitting diodes by using amino acid self-assembled monolayers

Wang, Nana; Lü, Cheng; Si, Junjie; Liang, Xiaohui; Jin, Yizheng; Wang, Jianpu; Huang, Wei

doi:10.1063/1.4945330

Cited by 75 publications

(55 citation statements)

References 28 publications

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“…Based on a similar strategy, Wang et al. used an amino‐acid‐based self‐assembled monolayer on top of a ZnO layer, achieving a EQE of 0.43 % and a brightness of 5000 cd m −2 for a MAPbBr 3 ‐based LED . Thus, the usage of an interlayer can boost the performance of the device in three different ways: reduction of the injection barrier, suppression of exciton quenching at the interface, and promotion of the growth of a uniform and pinhole‐free perovskite film.…”

Section: Perovskite‐based Ledsmentioning

confidence: 99%

“…Based on a similar strategy,W ang et al useda na mino-acid-based selfassembled monolayer on top of aZ nO layer, achievinga EQE of 0.43 %a nd ab rightness of 5000 cd m À2 for a MAPbBr 3 -based LED. [107] Thus,t he usage of an interlayer can boost the performanceo ft he device in three different ways:r eduction of the injection barrier, suppression of exciton quenchinga tt he interface,a nd promotion of the growth of au niform and pinhole-freeperovskite film. Becauseo ft heir low binding energies in perovskites excitons are readily dissociated at room temperature,l eading to quenchingo ft he luminescence.T oe nhance the probability of free-electron and free-hole capture and their subsequent bimolecular radiative recombination, it is therefore required to confine the charge carriersw ithin the emissive layer.…”

Section: Perovskite-based Ledsmentioning

confidence: 99%

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Recent Advances in Metal Halide‐Based Perovskite Light‐Emitting Diodes

2017

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Metal‐halide perovskite materials are crystalline semiconductors that can be processed at room temperature using solution‐processible deposition techniques. In only a few years, perovskite‐based solar cell efficiencies have seen a huge increase from 3 % to 22.1 %. These direct‐bandgap materials are potential candidates for other optoelectronic device applications such as photodetectors, light‐emitting transistors, and light‐emitting diodes. In this Review, we present the current state‐of‐the‐art in the research and development of perovskite light‐emitting diodes (PeLEDs) based on metal halide perovskite semiconductors with an emphasis on size of crystallites and its effects on optical properties, device architectures, and PeLED performance parameters. A uniform pinhole‐free morphology with small grain size is essential for high‐performance PeLEDs. For this purpose, a p‐i‐n type device architecture with a p‐type poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) layer was found to be more suitable than the n‐i‐p type. In PeLEDs based on bulk‐phase perovskites, the average size of the crystallites is in the range 100–500 nm. The efficiency can be improved further by using perovskite nanoparticles with size <100 nm. Color of the emitted light from these materials can be tuned over a wide range, that is, from NIR (775 nm) to near‐UV (410 nm), simply by changing the halide ion and the stoichiometric ratio between halide ions in the mixed‐halide‐type perovskites. Change of stoichiometry also affects the structural properties and the final film morphology, which in turn influences the radiative and non‐radiative recombination rates of the charge carriers and hence the device performance. Furthermore, we also provide recent developments in PeLEDs based on inorganic perovskite nanocrystals that complement the efforts being made in hybrid PeLEDs.

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Section: Perovskite‐based Ledsmentioning

confidence: 99%

Section: Perovskite-based Ledsmentioning

confidence: 99%

Recent Advances in Metal Halide‐Based Perovskite Light‐Emitting Diodes

2017

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“…These works demonstrated that pure perovskites can emit bright EL with very high color purity at RT. Many subsequent studies used a variety of experimental approaches to improve the luminescence efficiencies of PeLEDs (8)(9)(10)(49)(50)(51)(52)(53)(54)(55)(56)(57)(58)(59)(60)(61)(62)(63)(64)(65)(66).…”

Section: Renaissance Of Perovskite Emitters: Bulk Polycrystalline Filmentioning

confidence: 99%

“…3C). PeLEDs without interlayers showed the severe exciton quenching, large charge injection barrier, nonuniform perovskite film coverage, and thus very low EL efficiencies (9,52,61). Use of appropriate interlayers between electrodes and perovskite EMLs can facilitate charge injection by reducing injection barriers (9,49,52,55,61).…”

Section: Renaissance Of Perovskite Emitters: Bulk Polycrystalline Filmentioning

confidence: 99%

“…Use of appropriate interlayers between electrodes and perovskite EMLs can facilitate charge injection by reducing injection barriers (9,49,52,55,61). Furthermore, interlayers with modified surface energy or surface groups can contribute to the formation of uniform perovskite layers, reduce the leakage current, and improve the luminescence efficiencies of PeLEDs (10,55,61).…”

Section: Renaissance Of Perovskite Emitters: Bulk Polycrystalline Filmentioning

confidence: 99%

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Metal halide perovskite light emitters

Kim

Cho

Lee

2016

Proc. Natl. Acad. Sci. U.S.A.

499

441

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Twenty years after layer-type metal halide perovskites were successfully developed, 3D metal halide perovskites (shortly, perovskites) were recently rediscovered and are attracting multidisciplinary interest from physicists, chemists, and material engineers. Perovskites have a crystal structure composed of five atoms per unit cell (ABX 3 ) with cation A positioned at a corner, metal cation B at the center, and halide anion X at the center of six planes and unique optoelectronic properties determined by the crystal structure. Because of very narrow spectra (full width at half-maximum ≤20 nm), which are insensitive to the crystallite/grain/particle dimension and wide wavelength range (400 nm ≤ λ ≤ 780 nm), perovskites are expected to be promising high-color purity light emitters that overcome inherent problems of conventional organic and inorganic quantum dot emitters. Within the last 2 y, perovskites have already demonstrated their great potential in light-emitting diodes by showing high electroluminescence efficiency comparable to those of organic and quantum dot light-emitting diodes. This article reviews the progress of perovskite emitters in two directions of bulk perovskite polycrystalline films and perovskite nanoparticles, describes current challenges, and suggests future research directions for researchers to encourage them to collaborate and to make a synergetic effect in this rapidly emerging multidisciplinary field.As human civilization went through the information revolution, display technology has been designated as a core technology to increase convenience in daily human life. In an information society, the desire of humans to see the materials more vividly in displays has significantly increased. In this aspect, major trend of the display technology is changing from high resolution and high efficiency to high color purity for realizing vivid natural colors (Fig. 1). Therefore, research on new emitting materials that can emit light with narrow full width at halfmaximum (FWHM) have been attempted. Inorganic quantum dot (QD) emitters with narrow spectra (FWHM ∼30 nm) have been significantly studied following organic emitters (FWHM >40 nm); however, size-sensitive color purity, difficult size uniformity control, and expensive material costs of inorganic QD emitters retard the progress for wide use in industry. Therefore, new emitters with size-insensitively high color purity (FWHM <20 nm) and low material cost should be developed. Among many candidates, metal halide perovskites (hereafter, "perovskites") have gained great attentions and shown the possibility for future high-color purity emitters.The first perovskites were layer-type thin films (A 2 MX 4 ) (A = organic cation; M = divalent metal; X = Cl, Br, I) (1-6).They were expected to be novel hybrid materials that had both advantages of organic materials (e.g., solution processability and low material costs) and inorganic materials (e.g., high charge carrier mobility) (7). Especially, perovskites with high color purity, easy wavelength tuning, and ...

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Quantitative Correlation of Perovskite Film Morphology to Light Emitting Diodes Efficiency Parameters

et al. 2016

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This paper reports quantitative correlation of CH3NH3PbBr3 (MAPbBr3) thin film morphology to light emitting diode efficiency parameters. Sequential (spin coating) deposition is used for highly reproducible and dense film morphology of MAPbBr3 thin‐film. In this fabrication process using an orthogonal solvent approach, control of morphology, coverage, thickness, and optical properties in these compact thin‐films is demonstrated. Optical studies show direct correlation between morphology to dynamics of photoluminescence (PL) and absolute PL yield. Perovskite light emitting diodes (PeLEDs) are fabricated from these films to find the best ratio of PbBr2 versus MABr for optimal performance. This study demonstrates PeLEDs with high brightness, ≈1050 cd m−2 at 4.7 V (luminance efficiency ≈0.1 cd A−1), for optimal thin‐film process with state‐of‐the‐art device performance. This quantitative analysis suggests that these state‐of‐the‐art PeLEDs suffer from poor charge carrier balance (≈2%) and out‐coupling efficiency (≈6%). Interestingly, charge carrier balance and PL yield together can explain the change in PeLED efficiency modulation with film morphology. Studies on single carrier devices show that these PeLEDs are electron current dominated and charge carrier balance increases with operating bias voltage.

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Morphology control of perovskite light-emitting diodes by using amino acid self-assembled monolayers

Cited by 75 publications

References 28 publications

Recent Advances in Metal Halide‐Based Perovskite Light‐Emitting Diodes

Recent Advances in Metal Halide‐Based Perovskite Light‐Emitting Diodes

Metal halide perovskite light emitters

Quantitative Correlation of Perovskite Film Morphology to Light Emitting Diodes Efficiency Parameters

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