Morphology-controlled synthesis and characterization of CdTe micro-/nanoscale structures by electrodeposition method

Chi, Kailin; Li, Qian; Meng, Xianghe; Liu, Li; Yang, Haibin

doi:10.1007/s10853-017-1213-4

Cited by 9 publications

(1 citation statement)

References 29 publications

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“…Over several years, the study of II-VI binary semiconducting compounds related to cadmium chalcogenide group (CdS, CdSe and CdTe) has been intensified as they are considered to be very significant materials for photovoltaic applications [4]. Among widely used semiconductors, cadmium telluride (CdTe) is a material under consideration, which is one of the most promising binary II-VI group compound semiconductor used as an absorber in solar photocells because of its high absorption coefficient (>10 5 cm −1 ) in the visible range of solar spectrum, and optimum direct energy band gap of 1.44 eV, which is near the optimum for photovoltaic solar energy conversion [5]. Based on only thin-film technology, it is possible to build complete photovoltaic devices, which serve as one of the best feature of this semiconductor and possess higher efficiencies of 16.5% than those fabricated from single-crystal materials [6].…”

Section: Introductionmentioning

confidence: 99%

Effect of $$\hbox {Ar}^{+}$$ Ar + ion implantation on the properties of electrodeposited CdTe thin films

Goyal

Chauhan

2018

Bull Mater Sci

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Semiconducting nanomaterials of II-VI groups are the key elements of continued technological approaches made in the field of optoelectronic, magnetic and photonic devices due to their size-dependent properties. Ion beams create changes in the material along their track; this not only exhibits excellent properties but also tailors new materials. This article reports the effect of Ar + ion implantation on the properties of cadmium telluride thin films of about 80 nm thickness. The implantation parameters were adjusted based on computer-aided learning using SRIM (stopping and range of ions in matter) software. The CdTe thin films were deposited by electrodeposition method on ITO substrate. Thin films of CdTe are exposed to Ar + ions with different fluencies of 1 × 10 15 , 5 × 10 15 and 1 × 10 16 ions cm −2 at Ion Beam Centre, Kurukshetra University, Kurukshetra, India. After implantation, the films were characterized using UV-visible spectroscopy, photoluminescence (PL) and a four-probe setup with a programmable current-voltage (I-V) source metre. The scanning electron microscopy of pristine film showed smooth and uniform growth of sphere-shaped grains on substrate surface. From optical studies, the values of optical band gap for as-deposited and argon-ion-implanted thin films were calculated. It was found that values of optical band gap decreased with the increase in fluence of ion beam. From PL studies it was found that the intensity got increased with ion fluence. A considerable increase in current was noticed from I-V measurements with ion fluence after implantation. Different properties of pre-and post-implanted thin films are studied.

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Section: Introductionmentioning

confidence: 99%