Oxygen vacancy (V
O
) is a kind of primary point defect
that extensively exists in semiconductor metal oxides (SMOs). Owing
to some of its inherent qualities, an artificial manipulation of V
O
content in one material has evolved into a hot research field,
which is deemed to be capable of modulating band structures and surface
characteristics of SMOs. Specific to the gas-sensing area, V
O
engineering of sensing materials has become an effective means in
enhancing sensor response and inducing light-enhanced sensing. In
this work, a high-efficiency microwave hydrothermal treatment was
utilized to prepare a V
O
-rich ZnO sample without additional
reagents. The X-ray photoelectron spectroscopy test revealed a significant
increase in V
O
proportion, which was from 9.21% in commercial
ZnO to 36.27% in synthesized V
O
-rich ZnO possessing three-dimensional
and air-permeable microstructures. The subsequent UV–vis–NIR
absorption and photoluminescence spectroscopy indicated an extension
absorption in the visible region and band gap reduction of V
O
-rich ZnO. It turned out that the V
O
-rich ZnO-based sensor
exhibited a considerable response of 63% toward 1 ppm HCHO at room
temperature (RT, 25 °C) under visible light irradiation. Particularly,
the response/recovery time was only 32/20 s for 1 ppm HCHO and further
shortened to 10/5 s for 10 ppm HCHO, which was an excellent performance
and comparable to most sensors working at high temperatures. The results
in this work strongly suggested the availability of V
O
engineering
and also provided a meaningful candidate for researchers to develop
high-performance RT sensors detecting volatile organic compounds.