2021
DOI: 10.1002/adfm.202103705
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Morphology Inversion of a Non‐Fullerene Acceptor Via Adhesion Controlled Decal‐Coating for Efficient Conversion and Detection in Organic Electronics

Abstract: In this study, a promising film formation technique is highlighted, named mold-assisted decal-coating, as a thin film transfer printing process using the polyurethane acrylate-based stamping mold. By optimizing the surface energy of the mold with wetting coefficient theory, the mold-assisted decal-coating process is successfully demonstrated by transferring the photoactive layer composed of the polymer donor, poly[4,8-bis(5-(2-ethylhexyl) thiophen-2-yl)benzo[1,2-b;4,5-b′]dithiophene-2,6-diyl-alt-(4-(2-ethylhex… Show more

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Cited by 21 publications
(24 citation statements)
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“…Subsequently, the applied wetting coefficient (ω wc ) based on the interfacial energy value between materials predicts a thermodynamically stable wetting preference, confirming the possibility of successful phase switching BHJ formation . The wetting coefficient is defined as …”
Section: Resultsmentioning
confidence: 85%
See 1 more Smart Citation
“…Subsequently, the applied wetting coefficient (ω wc ) based on the interfacial energy value between materials predicts a thermodynamically stable wetting preference, confirming the possibility of successful phase switching BHJ formation . The wetting coefficient is defined as …”
Section: Resultsmentioning
confidence: 85%
“…Subsequently, the applied wetting coefficient (ω wc ) based on the interfacial energy value between materials predicts a thermodynamically stable wetting preference, confirming the possibility of successful phase switching BHJ formation . The wetting coefficient is defined as ω normalw normalc = γ normalm normalo normall normald normalB normalH normalJ γ normalB normalH normalJ normalP normalE normalD normalO normalT : normalP normalS normalS γ normalm normalo normall normald normalP normalE normalD normalO normalT : normalP normalS normalS …”
Section: Resultsmentioning
confidence: 86%
“…In the structure, pure donor/ accepter phases were formed in the regions near the anode/ cathode, respectively, to effectively suppress undesired charge injection, while the center region having mixed donor/acceptor interfaces for substantial photocurrent generation. To obtain such a q-PHJ, sequential deposition of the small molecule acceptor and the polymer donor and morphology engineering were developed [89][90][91][92][93]. Wei et al recently fabricated a self-powered NIR OPD using the sequential deposition method [94].…”
Section: ) Improving Charge Selectivity At the Contactsmentioning
confidence: 99%
“…[45] Since the OSC can be equivalent to a constant current source in the working state, the reduced output current can well explain why the FF of the large-area device is smaller than that of the small-area device. [46,47] Under the same device area, the internal resistance of the PTzBI:N2200 (0.5% DIO) device is larger than that of the PTzBI:N2200 (0% DIO) device, indicating that the addition of DIO helps to suppress the carrier recombination and thus boost the J SC and FF of large-area PTzBI:N2200 device.…”
Section: Charge Generation Transport and Recombinationmentioning
confidence: 99%