Morphology of oxide precipitates in Czochralski silicon degenerately doped with boron

Abstract

Articles you may be interested inEffect of heavy boron doping on the lattice strain around platelet oxide precipitates in Czochralski silicon wafers

Transmission electron microscopy investigation of the micro-defects in Czochralski silicon

“…tion was enhanced in the heavily boron-doped specimen. Thus, for the specimen H1, with the enhancements of the grown-in oxygen precipitates during crystal growth by boron doping [10,16] and the injection of vacancy to the bulk during RTA pre-annealing process [16,17], oxygen precipitates with high density generated in the bulk, as shown in Figs. 1 and 3, respectively.…”

“…It is believed that high concentration boron atoms may react with oxygen to form a large amount of boron-oxygen complexes, which can provide the heterogeneous nuclei center for oxygen precipitation. It is also reported that the degenerately doping with boron could lower the elastic moduli of silicon in both [1 1 0] and [1 1 1] direction and therefore the lattice strain introduced by the oxygen precipitates [10]. Thus, there is no doubt that compared with that of the lightly boron-doped specimen, the oxygen precipita- Fig.…”

“…On the other hand, the enhancement of oxygen precipitation by boron doping has been extensively investigated [10,15,16]. It is believed that high concentration boron atoms may react with oxygen to form a large amount of boron-oxygen complexes, which can provide the heterogeneous nuclei center for oxygen precipitation.…”

“…Nowadays, the behavior of boron in Czochralski silicon has attracted a lot of attention due to the use of heavy boron-doped substrate for large-scale integrated circuit fabrication [8,9]. It reveals that the doping of boron can enhance the formation of oxygen precipitate [5,10,11]. To our knowledge, the influence of both heavy boron doping and RTA pre-annealing on the formation of microdefects, investigated by TEM has not been reported extensively.…”

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

“…Third, the yield strength of silicon crystal decreases significantly with increasing temperature, leading to much easier generation of dislocations at higher temperature. 19 In view of the abovementioned analyses, it is clear that at higher temperature extended defects can be generated by relatively smaller-sized oxygen precipitates. Figure 5 shows the change in critical size for the generation of extended defects with the annealing ambient (N 2 , Ar, and O 2 ) for specimens annealed at 1050°C for 32 h. Here, the critical sizes for each specimen were also derived from the BMD size profiles measured at ten positions.…”