Morphology of silicon carbide formed by chemical vapour deposition

Pampuch, R.; Stobierski, L.

doi:10.1016/0390-5519(77)90028-x

Cited by 17 publications

(2 citation statements)

References 26 publications

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“…In the following analysis, grain size is also provided in terms of the less-appropriate grain diameter using the definition above to allow for comparison with previous studies of the SiC in TRISO fuel particles [17,18]. The average reported statistics are weighted by area fraction [17] β-SiC is a material with a high probably of twin formation [22] where twins represent the dominant CSL boundary [17], [18]. Twins are the lowest energy Low-Σ CSL boundaries and are expected to serve as limited percolation pathways for GB diffusion [23,24].…”

Section: Resultsmentioning

confidence: 99%

SiC layer microstructure in AGR-1 and AGR-2 TRISO fuel particles and the influence of its variation on the effective diffusion of key fission products

Gerczak

Hunn

Lowden

et al. 2016

Journal of Nuclear Materials

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Tristructural isotropic (TRISO) coated particle fuel is a promising fuel form for advanced reactor concepts such as high temperature gas-cooled reactors (HTGR) and is being developed domestically under the US Department of Energy's Nuclear Reactor Technologies Initiative in support of Advanced Reactor Technologies. The fuel development and qualification plan includes a series of fuel irradiations to demonstrate fuel performance from the laboratory to commercial scale. The first irradiation campaign, AGR-1, included four separate TRISO fuel variants composed of multiple, laboratory-scale coater batches. The second irradiation campaign, AGR-2, included TRISO fuel particles fabricated by BWX Technologies with a larger coater representative of an industrial-scale system. The SiC layers of as-fabricated particles from the AGR-1 and AGR-2 irradiation campaigns have been investigated by electron backscatter diffraction (EBSD) to provide key information about the microstructural features relevant to fuel performance. The results of a comprehensive study of multiple particles from all constituent batches are reported. The observations indicate that there were microstructural differences between variants and among constituent batches in a single variant. Insights on the influence of microstructure on the effective diffusivity of key fission products in the SiC layer are also discussed.

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Section: Resultsmentioning

confidence: 99%

SiC layer microstructure in AGR-1 and AGR-2 TRISO fuel particles and the influence of its variation on the effective diffusion of key fission products

Gerczak

Hunn

Lowden

et al. 2016

Journal of Nuclear Materials

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“…22 A layer growth mechanism was assumed to be valid for all supersaturations when for an adatom the ratio of its adsorbed energy to its thermal energy, a, is greater than 3.5. 23 For layerby-layer growth the linear growth rate of a given face (hkl) is proportional to the rate of formation of clusters on that face.…”

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confidence: 99%

Morphological evolution, Raman and photoluminescence spectra in optically transparent cubic silicon carbide

Russell

Freitas

Moore

et al. 1997

Adv. Mater. Opt. Electron.

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Silicon Carbide

Divakar¹,

Chia²,

Kunz³

et al. 2000

Kirk-Othmer Encyclopedia of Chemical Technology

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Silicon carbide, SiC, is a crystalline material having a color that varies from nearly clear through pale yellow or green to black, depending on the amount of impurities. It occurs naturally only as the mineral moissanite in the meteorite iron of Canon Diablo, Arizona. The commercial product, which is made in an electric furnace, is usually obtained as an aggregate of iridescent crystals. The iridescence is caused by a thin layer of silica produced by superficial oxidation of the carbide. The loose black or green grain of commerce is prepared from the manufactured product by crushing and grading for size. Traditionally, the metallurgical, abrasive, and refractory industries are the largest users of silicon carbide. SiC is also used for heating elements in electric furnaces, in electronic devices, and in applications where its resistance to nuclear radiation damage is advantageous. The development of advanced pressureless sintering and complex shape‐forming technologies has led to silicon carbide becoming one of the most important structural ceramics. Silicon carbide has found wide acceptance in wear‐, erosion‐, and corrosion‐resistant applications; it has demonstrated excellent performance as a heat‐exchanger material; it is also being evaluated for prototype high temperature gas turbine engine component applications. The measurements made on commercial, polycrystalline products should not be interpreted as being representative of single‐crystal silicon carbide. The pressureless‐sintered silicon carbides, being essentially single‐phase, fine‐grained, and polycrystalline, have properties distinct from both single crystals and direct‐bonded silicon carbide refractories. Silicon carbide may crystallize in the cubic, hexagonal, or rhombohedral structure. Silicon carbide is a leading candidate material for rotating and static components in many gas turbine engine applications. As is the case for other ceramics, silicon carbide is brittle in nature. The strength of a silicon carbide component is determined by preexisting flaws introduced into the material during processing. Sintered silicon carbide retains its strength at elevated temperatures. Silicon carbide is a semiconductor: it has a conductivity between that of metals and insulators or dielectrics. Silicon carbide is comparatively stable. The only violent reaction occurs when SiC is heated with a mixture of potassium dichromate and lead chromate. There are several routes to preparing SiC powders. Methods that have been examined include growth by sublimation from the vapor phase, carbothermic reduction, and crystallization from a melt. The high modulus, high intrinsic strength, and temperature stability make SiC, in the form of whiskers, platelets, and fibers, a promising candidate reinforcement material for metal, polymer, and ceramic matrix composites. Silicon carbide has been described as a mild inhalation irritant. The threshold limit value for silicon carbide in the atmosphere is 5 mg/m 3 .

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Morphology of silicon carbide formed by chemical vapour deposition

Cited by 17 publications

References 26 publications

SiC layer microstructure in AGR-1 and AGR-2 TRISO fuel particles and the influence of its variation on the effective diffusion of key fission products

SiC layer microstructure in AGR-1 and AGR-2 TRISO fuel particles and the influence of its variation on the effective diffusion of key fission products

Morphological evolution, Raman and photoluminescence spectra in optically transparent cubic silicon carbide

Silicon Carbide

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