Morphology of ZnO grown by MOCVD on sapphire substrates

Munuera, Carmen; Zúñiga‐Pérez, Jesús; Rommeluere, J.F.; Sallet, Vincent; Triboulet, R.; Soria, F.; Muñoz‐Sanjosé, V.; Ocal, Carmen

doi:10.1016/j.jcrysgro.2003.12.056

Cited by 43 publications

(34 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Munuera et al 8 investigated the morphology of the thinnest films ͑Ͻ500 nm͒ studied in this work using scanning force microscopy. They found significant differences between morphologies depending on whether the substrate surface exhibits steps ͑misoriented a, c, and r planes͒ or not ͑m plane͒.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Correlation between Zn vacancies and photoluminescence emission in ZnO films

Zubiaga

Garcı́a²,

Plazaola³

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5 nm ͑3.346 eV͒. This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy.

show abstract

Section: Resultsmentioning

confidence: 99%

“…A detailed discussion about the surface morphology and MOCVD growth conditions of the samples studied in this work is presented in Ref. 8.…”

Section: Methodsmentioning

confidence: 99%

Correlation between Zn vacancies and photoluminescence emission in ZnO films

Zubiaga

Garcı́a²,

Plazaola³

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…For more details on the MOCVD growth see Munuera et al 9 Scanning electron microscope ͑SEM͒ equipment ͑JEOL6400͒ was used for direct experimental thickness measurements. The error of the thickness measured by SEM corresponds to the difference between values determined at different positions along each sample.…”

Section: Methodsmentioning

confidence: 99%

Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers

et al. 2007

View full text Add to dashboard Cite

We present a method, based on positron annihilation spectroscopy, to obtain information on the defect depth profile of layers grown over high-quality substrates. We have applied the method to the case of ZnO layers grown on sapphire, but the method can be very easily generalized to other heterostructures ͑homostructures͒ where the positron mean diffusion length is small enough. Applying the method to the ratio of W and S parameters obtained from Doppler broadening measurements, W / S plots, it is possible to determine the thickness of the layer and the defect profile in the layer, when mainly one defect trapping positron is contributing to positron trapping at the measurement temperature. Indeed, the quality of such characterization is very important for potential technological applications of the layer.

show abstract

“…In films grown for 1000 s the minimum vacancy concentration has been found in the film grown over the m-plane orientation where scanning force microscope reveals flat surfaces. However, the a, c planes of sapphire present well-defined stepped surfaces 11 that produce a different morphology. This different morphology seems to be significant on the Zn vacancy concentration, even for samples 500 nm thick.…”

mentioning

confidence: 99%