Morphology optimization of side-chain copolymers yields a ternary memory device with high stability and reproducibility

Shen, Junyu; Wang, Guan; Xue, Fei; Zhu, Dingwei; Li, Yang; Zhou, Feng; Zhang, Qijian

doi:10.1039/d2qm00831a

Mater. Chem. Front.

2022

DOI: 10.1039/d2qm00831a

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Morphology optimization of side-chain copolymers yields a ternary memory device with high stability and reproducibility

Junyu Shen

Guan Wang

Fei Xue

et al.

Abstract: Side-chain polymers have been widely used in data-storage devices owing to the specific merits as easy synthesis and post-treatment, which is helpful for the large-scale application in future multilevle data-storage...

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2024

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Cited by 3 publications

References 49 publications

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Effect of terminal substituent of iso‐indigo‐based materials on the intermolecular stacking and memory performance

Hu,

Zhang,

Qin

et al. 2024

Chemistry An Asian Journal

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Attributed to the characteristics of narrow band gap structural units and full spectral response, iso‐indigo is often used as an electron acceptor in organic electronic materials. Organic molecules with large conjugated surfaces and strong intermolecular forces can form ordered stacked structures through self‐assembly. In this paper, the self‐assembly performances of IDCF3 and IDCN are regulated by changing the end groups. The effects of terminal groups on the resistive memory behaviours and reproducibility are investigated. The properties of IDCF3 and IDCN devices are characterized by UV‐VIS spectroscopy, cyclic voltammetry and DSC diffraction. The results show that when the end groups with different steric hindrance are introduced into the ends of the molecules with good backbone plane, the conjugated surfaces of the molecules will bend due to the different steric hindrance of the end groups in the form of cambium and layer‐ordered packing, which will affect the threshold voltage and device reproducibility.

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Effect of terminal substituent of iso‐indigo‐based materials on the intermolecular stacking and memory performance

Hu,

Zhang,

Qin

et al. 2024

Chemistry An Asian Journal

Self Cite

View full text Add to dashboard Cite

show abstract

Design and synthesis of pyridine-bridged benzothiazole-based D-A system for SRAM memory devices

Hait,

Angela,

Bhagyanath

et al. 2024

Synthetic Metals

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Porphyrin MOF nanosheets used for light-mediated multilevel memristive switching

Liu,

Song,

Pei

et al. 2024

CrystEngComm

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Morphology optimization of side-chain copolymers yields a ternary memory device with high stability and reproducibility

Abstract: Side-chain polymers have been widely used in data-storage devices owing to the specific merits as easy synthesis and post-treatment, which is helpful for the large-scale application in future multilevle data-storage...

Cited by 3 publications

References 49 publications

Effect of terminal substituent of iso‐indigo‐based materials on the intermolecular stacking and memory performance

Effect of terminal substituent of iso‐indigo‐based materials on the intermolecular stacking and memory performance

Design and synthesis of pyridine-bridged benzothiazole-based D-A system for SRAM memory devices

Porphyrin MOF nanosheets used for light-mediated multilevel memristive switching

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