Morphology, Raman scattering and photoluminescence of porous GaAs layers

Silicon Porosification: State of the Art

“…For example an XPS study of porous GaAs films obtained by electrochemical etching in HF:H 2 O or HF:C 2 H 5 OH:H 2 O electrolytes showed that the porous layer consists of Ga 2 O 3 , As 2 O 3 , As 2 O 5 and GaAs submicron grains. 660,662 Obtained data is in good accordance with the results presented by Finnie et al, 697 who have investigated the etching of GaAs in HCl-based solutions. XPS data have confirmed that the porous layer consists predominantly of Ga 2 O 3 and As 2 O 3 .…”

Morphology and optical properties of p-type porous GaAs(100) layers made by electrochemical etching

“…The porous III-V compounds are most noteworthy and might have applications beyond nonlinear optics, because there are possible pore structures which cannot be produced with Si [7]. Porous GaAs [8][9][10][11][12][13][14] and porous InP [15][16][17] to the bulk materials have been revealed [8,18]. The present work is an extension of previous works.…”

Micro‐Raman analysis of GaAs Schottky barrier solar cell

“…The obtained spectra contain some laser plasma lines (marked 'p' on the figures). [10,11] In semi-insulating GaAs (100) oriented samples (zinc blende structure), only the longitudinal optical phonon A 1 (LO) is allowed and the transverse optical phonon A 1 (TO) is forbidden. In the present investigation, both LO and TO modes appear in the Raman spectra of the implanted and annealed GaAs samples.…”