MOS interface-state density measurements using transient capacitance spectroscopy

Wang, K.L.

doi:10.1109/t-ed.1980.20257

Cited by 35 publications

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“…[5][6][7] For the present study, however, this method does not estimate the density of states correctly, because the defect states caused by oxygen precipitation have a continuous depth distribution, whereas the Si/SiO 2 states in MOS and MIS structures are localized at the interface. Holzlein, Pensl, and Schulz 8 extended the procedure to take account of bulk states with concentrations having a continuous distribution in depth.…”

Section: Resultsmentioning

confidence: 99%

Gap states caused by oxygen precipitation in Czochralski silicon crystals

Koizuka

Yamada-Kaneta

1998

Journal of Applied Physics

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Section: Resultsmentioning

confidence: 99%

Gap states caused by oxygen precipitation in Czochralski silicon crystals

Koizuka

Yamada-Kaneta

1998

Journal of Applied Physics

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“…The measurement technique is described in detail elsewhere (14,15,17,18). The measurement technique is described in detail elsewhere (14,15,17,18).…”

Section: Methodsmentioning

confidence: 99%

Process‐Induced Interface and Bulk States in MOS Structures

Hofmann

Schulz

1985

J. Electrochem. Soc.

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peratures above 100~ Estimation of I~ .... in conjunction with IR.m is as follows. As we mentioned in the previous section, the maximum leakage current can be observed when the surface begins to invert. Therefore, the maximum current, which shows the peak value in the IR-I~ curve, involves the sum of IR.~u (weak inversion), IR~FU, and IR,~,j (maximum). Supposing IR.FIJ (weak inversion) is approximately equal to IR.Fu (strong inversion), Ig .... is defined as the subtraction of the sum of IR.MJ and Imnj (strong inversion) from the peak value. Figure 6 shows the temperature dependence of I~ ..... which has approximately the same temperature dependence as ni. Using Eq.[6], surface recombination velocity so is estimated as shown in Fig. 7. It tends to decrease with increases in temperature. A possible explanation is that the energy level Et of the main surface generation-recombination center is not located exactly at the intrinsic Fermi level. Also, as is shown in Fig. 7, so tends to decrease with decreases in reverse voltage. This reverse voltage dependence suggests that surface recombination velocity is subjected to a decrease in surface potential under the reverse biased nonequilibrium condition. ConclusionsA new type of gate-controlled diode (GCD) was proposed to investigate the leakage currents of a thick zinc Hitachi Limited assisted in meeting the publication costs of this article.

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“…When relatively large FETs are available, the standard capacitance DLTS technique cm be easily modified by reverse biasing of source and drain regions, and measuring the gate-substrate MOS structure [247]. Furthemore, unlike the simple MOS structure, the existence of the source and drain in a MOSFET, being large reservoirs of minon ty current caniers, allows measurements of minority carrier traps [245,246] although the data interpretation can be complicated by simultaneous trapping and emission of majonty carriers To avoid the above mculties, the conductance DLTS [32] was proposed for measurements of MOSFETs.…”

Section: Overview Of Ter3 Dlts Techniques Applied For Fetsmentioning

confidence: 99%

Development and Applications of a New Deep Level Transient Spectroscopy Method and New Averaging Techniques

Kolev

Deen

1999

Advances in Imaging and Electron Physics

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This manuscript has been reproduced frorn the microfilm master. UMI films the text directly from the original or copy submitted. Thus, some thesis and dissertation copies are in typewriter face, while others may be frorn any type of computer printer.The quality of this reproduction i s dependent upon the quality of the copy submitted. Broken or indistinct ptint, colored or poor quality illustrations and photographs, print bleedthrough, substandard margins, and improper alignment can adversely affect reproduction.In the unlikely event that the author did not send UMI a complete manuscript and there are missing pages, these will be noted. Also, if unauthorized wpwght material had to be removed, a note will indicate the deletion.Oversize materials (e-g., maps, drawings, charts) are reproduced by sedioning the original, beginning at the upper left-hand corner and continuing from left to right in equal sections with small overlaps. Each original is also photographed in one exposure and is included in reduced form at the back of the book.Photographs included in the original manuscript have been reproduced xerographically in this copy. Higher quality 6" x 9" black and white photographic prints are available for any photographs or illustrations appearing in this w p y for an additional charge. Contact UMI directly to order. The author has granted a nonexclusive licence allowing the National Library of Canada to reproduce, loîn, distribute or sell copies of this thesis in microform, paper or electronic formats.The author retains ownership of the copyright in this thesis. Neither the thesis nor substantial extracts fiom it may be printed or othenirise reproduced without the author's permission.L'auteur a accordé une licence non exclusive permettant à la Bibliothéque nationale du Canada de reproduire, prêter, distribuer ou vendre des copies de cette thèse sous la forme de microfiche!film, de reproduction sur papier ou sur format électronique.L'auteur conserve la propriété du droit d'auteur qui protège cette thèse. Ni fa thèse ni des extraits substantiels de celle-ci ne doivent être imprimés ou autrement reproduits sans son autorisation, AbstractIn this thesis, we report new advancements in the field of Deep Level Transient Spectroscopy (DLTS) which is a powerfûl method for investigation of elecûically active point defects in semiconductors. We demonstrate these advancements by building a stateof-the-art DLTS system and perfonning extensive measurements on several types of fieldeffec t transis tors (FETs) .We iltroduce a new approach to digital signal processing in DLTS systems. The problems of signal recovery from noise and efficient data storage are addressed separately from the transient signal analysis. We combine two complementary digital averaging techniques which substantially improve the DLTS digital signal processing. Compared to other digital D U S systems, the new averaging techniques offer an improved time resolution at the beginning of the transient, improved signal-to-noise ratio, and more efficient data stor...

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MOS interface-state density measurements using transient capacitance spectroscopy

Cited by 35 publications

References 0 publications

Gap states caused by oxygen precipitation in Czochralski silicon crystals

Gap states caused by oxygen precipitation in Czochralski silicon crystals

Process‐Induced Interface and Bulk States in MOS Structures

Development and Applications of a New Deep Level Transient Spectroscopy Method and New Averaging Techniques

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