MoS<sub>2</sub> Memristors Exhibiting Variable Switching Characteristics toward Biorealistic Synaptic Emulation

Li, Da; Wu, Bin; Zhu, Xiaojian; Wang, Juntong; Ryu, Byunghoon; Lu, Wei; Liang, Xiaogan

doi:10.1021/acsnano.8b03977

Cited by 219 publications

(266 citation statements)

References 52 publications

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“…[131] Sangwan et al demonstrated gate-tunable multi-terminal memtransistor based on polycrystalline monolayer MoS 2 and explored the device application in neuromorphic computing. [131] Sangwan et al demonstrated gate-tunable multi-terminal memtransistor based on polycrystalline monolayer MoS 2 and explored the device application in neuromorphic computing.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

2D Layered Materials for Memristive and Neuromorphic Applications

Wang

Meng

et al. 2019

Adv Elect Materials

102

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demonstrated that the memristive devices exhibit many promising features, [3][4][5][6][7][8] such as non-volatility, high speed switching, high endurance, high-density integration, CMOS-compatible fabrication, and so on. These features make them ideal candidates for applications in memory devices, [3,5,9] in-memory computing, [3,[10][11][12] and edge computing. [13,14] The working principle of the TMOs-based memristive devices relies on ion drift or diffusion, which resembles motion of ions in the biological neurons and synapses. The ionic motions exhibit dynamic behaviors. Thus, the memristive devices can be used to emulate the synaptic plasticity [15] and neurons. [16][17][18] Compared to traditional silicon synapses [19][20][21] and neurons [22,23] requiring complex circuits, such emerging memristive devices have compact structures and enhanced func-

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Section: Wwwadvelectronicmatdementioning

confidence: 99%

2D Layered Materials for Memristive and Neuromorphic Applications

Wang

Meng

et al. 2019

Adv Elect Materials

102

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“…[50][51][52][53] Given the strong in-plane chemical bonds, manipulating the ion distribution in 2D chalcogenides by an electric field is initially thought to be unlikely. [50][51][52][53] Given the strong in-plane chemical bonds, manipulating the ion distribution in 2D chalcogenides by an electric field is initially thought to be unlikely.…”

Section: Anion-driven Rs Effectsmentioning

confidence: 99%

“…[50][51][52][53] Given the strong in-plane chemical bonds, manipulating the ion distribution in 2D chalcogenides by an electric field is initially thought to be unlikely. [53] Considering that sulfur www.advelectronicmat.de ions have a higher mobility than molybdenum ions, sulfur ions are more likely to redistribute during device programming, and sulfur vacancies can act as n-type dopants and modulate the Schottky barrier height at the electrode/MoS 2 interface that leads to the observed RS behaviors. For example, in a memristive device based on mechanically exfoliated MoS 2 (Figure 2i), it was found that applying 5000 strong programming pulses (20 V/2 ms) can lead to the modulation of the S:Mo atomic ratio, with an increased (decreased) atomic ratio near the anode (cathode) (Figure 2j,k).…”

Section: Anion-driven Rs Effectsmentioning

confidence: 99%

“…[52] The authors proposed that the accumulation and dissipation of sulfur vacancies near the grain boundaries between the electrodes account for the RS effects, as Reproduced with permission. [53] Copyright 2018, American Chemical Society. c) Bright-field TEM image of a Ta/TaO x /Pt device in LRS state.…”

Section: Anion-driven Rs Effectsmentioning

confidence: 99%

“…[53,91] For example, a monolayer MoS 2 -based multiterminal structure has been used to emulate a neural circuit, where the conductance of the MoS 2 film between two inner electrodes (as pre-and postneurons) can be tuned by applying programming pulses on the two outer electrodes (as modulatory neurons). [53,91] For example, a monolayer MoS 2 -based multiterminal structure has been used to emulate a neural circuit, where the conductance of the MoS 2 film between two inner electrodes (as pre-and postneurons) can be tuned by applying programming pulses on the two outer electrodes (as modulatory neurons).…”

Section: Heterosynaptic Plasticitymentioning

confidence: 99%

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Nanoionic Resistive‐Switching Devices

Zhu

Lee

Lü

2019

Adv Elect Materials

Self Cite

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devices have opened up promising opportunities for electronic circuit applications beyond energy storage. One representative example is ionic resistive-switching (RS) devices (also called memristive devices or memristors), [3][4][5] which can be used as a nonvolatile memory element due to its excellent performance such as high switching speed (<1 ns), [6] good retention (>10 years), [7] good endurance (>10 9 ), [8] as well as high device scalability. [9] The RS effect refers to the phenomenon that the resistance of a dielectric thin film, typically sandwiched between two electrodes, can be reversibly modulated by an electric field. [2] In ionic RS devices, the mechanism originates from the rearrangement of atoms/ions in the dielectric thin film through ionic drift/ diffusion and electrochemical processes that lead to the formation/rupture of nanoscale conductive paths (filaments) between the two electrodes. [10] Controlling these internal ionic processes will enable the design and implementation of better engineered devices with improved performance and reliability. Additionally, recent studies show that the internal ionic processes during RS can be used to faithfully emulate many biological effects that are critical for learning and memory, allowing efficient neuromorphic systems to be implemented using solid-state devices and networks. [11][12][13] Controlled ionic processes can also be used to directly modify the composition and/or structure of the material itself at the atomic scale, allowing new nanostructures to be built on the fly, in a reconfigurable fashion.In this review, we will first discuss the switching mechanism of ion-induced RS (memristive) effects in nanoscale solid-state thin films, followed by discussions on controlling and utilization of the ionic effects to implement biological synaptic functions, and to reduce device variation and improve device stability. New concepts of material tuning enabled by controlled ionic process will be introduced at the end. Ion-Induced RS EffectSo far, ion-driven RS effects have been observed in a large variety of materials, ranging from oxides, halides, to chalcogenides, etc. [2,[13][14][15] Based on the types of ions involved during the RS process, the switching mechanism can be divided to three categories: cation-driven RS effects, anion-driven RS effects, and cation and anion jointly driven RS effects.Advances in the understanding of nanoscale ionic processes in solid-state thin films have led to the rapid development of devices based on coupled ionic-electronic effects. For example, ion-driven resistive-switching (RS) devices have been extensively studied for future memory applications due to their excellent performance in terms of switching speed, endurance, retention, and scalability. Recent studies further suggest that RS devices are more than just resistors with tunable resistance; instead, they exhibit rich and complex internal ionic dynamics that equip them with native information-processing capabilities, particularly in the temporal domain. RS effec...

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