MoS2 transistors gated by ferroelectric HfZrO2 with MoS2/mica heterojunction interface

Zou, Xiao Ping; Zou, Jiyue; Lu, Lei; Wang, Hongjiu; Xu, Jing-Ping

doi:10.1088/1361-6528/ac2191

Cited by 4 publications

(2 citation statements)

References 35 publications

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“…As soon as equally inert surfaces of good gate insulators are found, these technologies will be on-track to shape the future of electronic applications. (References: 1, [31] 2-3, [60] 4, [180] 5, [181] 6, [93] 7, [126] 8-9, [76] 10-11, [86] 12-13, [137] 14-15, [25] 16, [59] 17, [89] 18, [182] and 19 [183] ).…”

Section: Discussionmentioning

confidence: 99%

Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

et al. 2022

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Within the last decade, considerable efforts have been devoted to fabricating transistors utilizing 2D semiconductors. Also, small circuits consisting of a few transistors have been demonstrated, including inverters, ring oscillators, and static random access memory cells. However, for industrial applications, both time‐zero and time‐dependent variability in the performance of the transistors appear critical. While time‐zero variability is primarily related to immature processing, time‐dependent drifts are dominated by charge trapping at defects located at the channel/insulator interface and in the insulator itself, which can substantially degrade the stability of circuits. At the current state of the art, 2D transistors typically exhibit a few orders of magnitude higher trap densities than silicon devices, which considerably increases their time‐dependent variability, resulting in stability and yield issues. Here, the stability of currently available 2D electronics is carefully evaluated using circuit simulations to determine the impact of transistor‐related issues on the overall circuit performance. The results suggest that while the performance parameters of transistors based on certain material combinations are already getting close to being competitive with Si technologies, a reduction in variability and defect densities is required. Overall, the criteria for parameter variability serve as guidance for evaluating the future development of 2D technologies.

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Section: Discussionmentioning

confidence: 99%

Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

et al. 2022

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“…Table 1 [536][537][538][539][540][541][542][543][544][545][546] summarises the ferroelectric gate stack and channel materials commonly employed in recent years for 2D NCFETs and compares their minimum SS values. P(VDF-TrFE) is a promising ferroelectric material for storage applications due to its large storage window and long retention time.…”

Section: Negative-capacitance Fetmentioning

confidence: 99%

Two-dimensional materials for future information technology: status and prospects

Qiu,

Yu,

Zhao

et al. 2024

Sci. China Inf. Sci.

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Over the past 70 years, the semiconductor industry has undergone transformative changes, largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional (2D) materials like transition metal dichalcogenides (TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

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Top-Gated MoS₂ Negative-Capacitance Transistors Fabricated by an Integral-Transfer of Pulsed Laser Deposited HfZrO₂ on Mica

Zou

Liu

et al. 2022

IEEE Trans. Electron Devices

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MoS₂ transistors gated by ferroelectric HfZrO₂ with MoS₂/mica heterojunction interface

Cited by 4 publications

References 35 publications

Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

Two-dimensional materials for future information technology: status and prospects

Top-Gated MoS₂ Negative-Capacitance Transistors Fabricated by an Integral-Transfer of Pulsed Laser Deposited HfZrO₂ on Mica

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