MoS<sub>2</sub> Transistors Operating at Gigahertz Frequencies

Krasnozhon, Daria; Lembke, Dominik; Nyffeler, Clemens; Leblebici, Yusuf; Kis, András

doi:10.1021/nl5028638

Cited by 172 publications

(146 citation statements)

References 39 publications

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“…High-frequency operation of MoS 2 FETs was also recently demonstrated by Krasnozhon et al (Figure 4), who demonstrated current, voltage, and power gains in the gigahertz range in transistors based on 1−3 layer thick MoS 2 with a channel length of 240 nm. 16 This shows that the mobility of MoS 2 is large enough to allow device operation in the technologically relevant gigahertz frequency range. These performance figures are currently limited rather by the contact resistance and relatively large gate lengths, and scaling is expected to result in further improvements of the operating speed.…”

Section: ■ Mos 2 Transistorsmentioning

confidence: 93%

Single-Layer MoS₂ Electronics

2015

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CONSPECTUS: Atomic crystals of two-dimensional materials consisting of single sheets extracted from layered materials are gaining increasing attention. The most well-known material from this group is graphene, a single layer of graphite that can be extracted from the bulk material or grown on a suitable substrate. Its discovery has given rise to intense research effort culminating in the 2010 Nobel Prize in physics awarded to Andre Geim and Konstantin Novoselov. Graphene however represents only the proverbial tip of the iceberg, and increasing attention of researchers is now turning towards the veritable zoo of so-called "other 2D materials". They have properties complementary to graphene, which in its pristine form lacks a bandgap: MoS 2 , for example, is a semiconductor, while NbSe 2 is a superconductor. They could hold the key to important practical applications and new scientific discoveries in the two-dimensional limit. This family of materials has been studied since the 1960s, but most of the research focused on their tribological applications: MoS 2 is best known today as a high-performance dry lubricant for ultrahigh-vacuum applications and in car engines. The realization that single layers of MoS 2 and related materials could also be used in functional electronic devices where they could offer advantages compared with silicon or graphene created a renewed interest in these materials. MoS 2 is currently gaining the most attention because the material is easily available in the form of a mineral, molybdenite, but other 2D transition metal dichalcogenide (TMD) semiconductors are expected to have qualitatively similar properties. In this Account, we describe recent progress in the area of single-layer MoS 2 -based devices for electronic circuits. We will start with MoS 2 transistors, which showed for the first time that devices based on MoS 2 and related TMDs could have electrical properties on the same level as other, more established semiconducting materials. This allowed rapid progress in this area and was followed by demonstrations of basic digital circuits and transistors operating in the technologically relevant gigahertz range of frequencies, showing that the mobility of MoS 2 and TMD materials is sufficiently high to allow device operation at such high frequencies. Monolayer MoS 2 and other TMDs are also direct band gap semiconductors making them interesting for realizing optoelectronic devices. These range from simple phototransistors showing high sensitivity and low noise, to light emitting diodes and solar cells. All the electronic and optoelectronic properties of MoS 2 and TMDs are accompanied by interesting mechanical properties with monolayer MoS 2 being as stiff as steel and 30× stronger. This makes it especially interesting in the context of flexible electronics where it could combine the high degree of mechanical flexibility commonly associated with organic semiconductors with high levels of electrical performance. All these results show that MoS 2 and TMDs are promising materials for elect...

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Section: ■ Mos 2 Transistorsmentioning

confidence: 93%

Single-Layer MoS₂ Electronics

2015

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“…3(a) inset]. With low resistance Ohmic contacts to the MoSe 2 monolayer, it should be possible to exploit the strong V g dependence of excitonic response to realize fast switching of mirror transmission and reflection, potentially on subnanosecond time scales [24].…”

Section: (C)mentioning

confidence: 99%

Realization of an Electrically Tunable Narrow-Bandwidth Atomically Thin Mirror Using MonolayerMoSe2

et al. 2018

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Advent of new materials such as van der Waals heterostructures, propels new research directions in condensed matter physics and enables development of novel devices with unique functionalities. Here, we show experimentally that a monolayer of MoSe 2 embedded in a charge controlled heterostructure can be used to realize an electrically tunable atomically-thin mirror, that effects 90% extinction of an incident field that is resonant with its exciton transition. The corresponding maximum reflection coefficient of 45% is only limited by the ratio of the radiative decay rate to the linewidth of exciton transition and is independent of incident light intensity up to 400 Watts/cm 2 . We demonstrate that the reflectivity of the mirror can be drastically modified by applying a gate voltage that modifies the monolayer charge density. Our findings could find applications ranging from fast programmable spatial light modulators to suspended ultra-light mirrors for optomechanical devices.A plethora of ground-breaking experiments have established monolayers of transition metal dichalcogenides (TMD) such as MoSe 2 or WSe 2 as a new class of two dimensional (2D) direct 1

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“…3 While the RF applications of MoS 2 are still in their infancy, recent studies have pushed exfoliated MoS 2 cut off frequencies significantly higher. [4][5][6] The study by Krasnozhon et al employed edge contacts to achieve an intrinsic f T of 25 GHz in trilayer exfoliated MoS 2 . 5 The work by Cheng et al used transferred gate stacks on multilayer exfoliated MoS 2 to obtain an intrinsic f T of 42 GHz.…”

Section: Molybdenum Disulfide (Mosmentioning

confidence: 99%

Embedded gate CVD MoS2 microwave FETs

et al. 2017

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Recent studies have increased the cut off frequencies achievable by exfoliated MoS 2 by employing a combination of channel length scaling and geometry modification. However, for industrial scale applications, the mechanical cleavage process is not scalable but, thus far, the same device improvements have not been realized on chemical vapor deposited MoS 2 . Here we use a gate-first process flow with an embedded gate geometry to fabricate short channel chemical vapor deposited MoS 2 radio frequency transistors with a notable f T of 20 GHz and f max of 11.4 GHz, and the largest high-field saturation velocity, v sat = 1.88 × 10 6 cm/s, in MoS 2 reported so far. The gate-first approach, facilitated by cm-scale chemical vapor deposited MoS 2 , offers enhancement mode operation, I ON /I OFF ratio of 10 8 , and a transconductance (g m ) of 70 μS/μm. The intrinsic f T (f max ) obtained here is 3X (2X) greater than previously reported top-gated chemical vapor deposited MoS 2 radio frequency field-effect transistors. With as-measured S-parameters, we demonstrate the design of a GHz MoS 2 -based radio frequency amplifier. This amplifier has gain greater then 15 dB at 1.2 GHz, input return loss > 10 dB, bandwidth > 200 MHz, and DC power consumption of~10 mW.

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MoS₂ Transistors Operating at Gigahertz Frequencies

Cited by 172 publications

References 39 publications

Single-Layer MoS₂ Electronics

Single-Layer MoS₂ Electronics

Realization of an Electrically Tunable Narrow-Bandwidth Atomically Thin Mirror Using MonolayerMoSe2

Embedded gate CVD MoS2 microwave FETs

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MoS2 Transistors Operating at Gigahertz Frequencies

Cited by 172 publications

References 39 publications

Single-Layer MoS2 Electronics

Single-Layer MoS2 Electronics

Realization of an Electrically Tunable Narrow-Bandwidth Atomically Thin Mirror Using MonolayerMoSe2

Embedded gate CVD MoS2 microwave FETs

Contact Info

Product

Resources

About

MoS₂ Transistors Operating at Gigahertz Frequencies

Single-Layer MoS₂ Electronics

Single-Layer MoS₂ Electronics