2005
DOI: 10.1109/tcad.2004.842818
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MOS table models for circuit simulation

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Cited by 30 publications
(13 citation statements)
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“…LUTs are then generated using the TCAD simulator as discussed in Section II. Similar calibration approaches are used in [12] and [26]. The schematic diagram of FinFET structure used for simulations is shown in Fig.…”
Section: B Finfet Circuit Examples and Resultsmentioning
confidence: 99%
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“…LUTs are then generated using the TCAD simulator as discussed in Section II. Similar calibration approaches are used in [12] and [26]. The schematic diagram of FinFET structure used for simulations is shown in Fig.…”
Section: B Finfet Circuit Examples and Resultsmentioning
confidence: 99%
“…However, in the region of transition between these two behaviors, the I D -V G data cannot be fitted with either of these functions. This issue has been addressed by Bourenkov et al [12] by using blending functions [11] to model the transition region. However, the approach described in [12] requires a nonuniform grid which needs to be carefully chosen by the user manually, depending on the different regions of device operation.…”
Section: Lut Approach For Finfetsmentioning
confidence: 99%
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“…Various LUT-based techniques have been demonstrated in the past [3], [4]. In general, they are not suitable for manual designs because it is not a mathematical description.…”
Section: Introductionmentioning
confidence: 99%
“…Though this approach do not provide any physical insight; however, these models serve as excellent tools for quick circuit simulation [1][2][3][4][5][6][7][8][9]. In general this approach uses measured data to accurately reproduce the complex nonlinear behavior of semiconductor devices.…”
Section: Introductionmentioning
confidence: 99%