MOS transistors with stacked SiO/sub 2/-Ta/sub 2/O/sub 5/-SiO/sub 2/ gate dielectrics for giga-scale integration of CMOS technologies

Kizilyalli, I.C.; Huang, Ru; Roy, R.

doi:10.1109/55.728900

Cited by 78 publications

(27 citation statements)

References 16 publications

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“…Actually, this kind of annealing condition supplies an ultrathin high-quality Hf silicate interface layer between high-k/Si with a higher k value. 25,26 This work demonstrates that the proper PDA condition can effectively reduce defect densities in both …”

Section: Methodsmentioning

confidence: 76%

Zirconium-Doped Hafnium Oxide High-k Dielectrics with Subnanometer Equivalent Oxide Thickness by Reactive Sputtering

Yan

Kuo

Lü

2007

Electrochem. Solid-State Lett.

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Ultrathin zirconium-doped hafnium oxide high dielectric constant films, e.g., with an equivalent oxide thickness less than 1 nm, have been prepared by high-power sputtering and low oxygen content annealing conditions on the p-type Si͑100͒ substrate. The influence of the process conditions on the film's material and electrical properties were investigated with X-ray photoelectron spectroscopy analysis and electrical measurements. The low equivalent oxide film also shows a small charge trapping density, a low leakage current density, and a moderate interface state density. This is a viable gate dielectric film for future complementary metal oxide semiconductor devices.The continuous shrinkage of complementary metal oxide semiconductor ͑CMOS͒ device dimensions necessitates the use of a high dielectric constant ͑high-k͒ gate dielectric material to replace the thermal grown silicon dioxide ͑SiO 2 ͒. 1 Metal oxides such as hafnium oxide ͑HfO 2 ͒ and zirconium oxide ͑ZrO 2 ͒ have been extensively studied as the high-k gate dielectric candidates because of their high k values, large electron band offsets to silicon, and good thermal stability in contact with silicon. 2-5 However, both HfO 2 and ZrO 2 crystallize at a relatively low temperature, Ͻ700°C, which is a potential reliability problem. Previously, it was demonstrated that many physical and electrical properties of a metal oxide high-k gate dielectric, such as the amorphous-to-polycrystalline transition temperature, interface layer quality, k value, dielectric breakdown strength, and leakage current density, could be improved by the doping method, i.e., adding a third element into the film. 6-9 For example, the zirconium-doped hafnium oxide ͑Zr-doped HfO 2 ͒ dielectric showed a lower equivalent oxide thickness ͑EOT͒ and smaller interface state density ͑D it ͒ than the undoped HfO 2 . 8 This result is consistent whether the high-k film was deposited by sputtering or atomic layer deposition ͑ALD͒. 8,9 The recent work on the ALD Zr-doped HfO 2 high-k dielectric film demonstrated that the addition of ZrO 2 into HfO 2 would not only help to partially stabilize the tetragonal structure of HfO 2 but also improve the surface morphology of the high-k film, both of which play critical roles in improving device characteristics. 10 Previously, it was reported that a proper amount of dopant in the high-k film can increase its crystallization temperature. 11 The Zr-doped HfO 2 dielectric film in this work is amorphous. 12 In general, the amorphous high-k dielectrics are desirable for uniform dielectric properties and reliability concerns. 1 According to the International Technology Roadmap for Semiconductor ͑ITRS͒, a high-k gate dielectric film with an EOT less than 1 nm will be required for future CMOS applications. 13 In this paper, we have investigated the feasibility of preparing such a gate dielectric by the reactive sputtering method as well as the influences of process conditions to the high-k film's dielectric properties. ExperimentalThe Zr-doped HfO 2 thin film was dep...

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Section: Methodsmentioning

confidence: 76%

Zirconium-Doped Hafnium Oxide High-k Dielectrics with Subnanometer Equivalent Oxide Thickness by Reactive Sputtering

Yan

Kuo

Lü

2007

Electrochem. Solid-State Lett.

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“…Various oxides such as titania (TiO 2 ), 7 zirconia (ZrO 2 ), [8][9][10][11] hafnia (HfO 2 ), 12 tantala (Ta 2 O 5 ), [13][14][15] as well as silicates of zirconium (ZrSi x O y ) 16 and hafnium (HfSi x O y ) 12,17 are potentially useful because of their relatively high k ͑10-30͒. A higher k would enable a gate dielectric to be electrically thinner ͑to attain an EOT between 1.3-0.5 nm͒, yet physically thicker (Ͼ2 nm, to limit leakage current below 1 A/cm 2 at supply voltage, V DD ).…”

Section: Introductionmentioning

confidence: 99%

“…18 -25 The high-k materials are either deposited on oxidized or HF treated Si and SiGe wafers. [7][8][9][10][11][12][13][14][15][16][17][18]26 Among the various methods of deposition, the atomic layer chemical vapor deposition ͑ALCVD͒ process, with its composition controllability over large areas at practical deposition rates, has significant potential for growing thin high-k layers. Our primary interest is to deposit Zr and Hf oxide-based layers by ALCVD, followed by direct nanoscale characterization of the resulting layers to relate chemical and geometric nanostructure of the films to the EOT IL and EOT high k contributions to the total EOT.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer chemical vapor deposition of ZrO2-based dielectric films: Nanostructure and nanochemistry

Dey

Wang

Tang

et al. 2003

Journal of Applied Physics

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“…Despite the immense development with SiO 2 , these oxynitrides still have low k values and so a relatively thick layer is required to prevent direct tunneling current. Therefore, alternative materials with a higher k than SiO 2 (3.9) are needed to achieve the required capacitance without tunneling currents [15]. [16].…”

Section: Brief History Of High-k Dielectric Developmentmentioning

confidence: 99%

Hafnium-based High-k Gate Dielectrics

Huang¹,

Yang²,

Chu³

2010

Advances in Solid State Circuit Technologies

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MOS transistors with stacked SiO/sub 2/-Ta/sub 2/O/sub 5/-SiO/sub 2/ gate dielectrics for giga-scale integration of CMOS technologies

Cited by 78 publications

References 16 publications

Zirconium-Doped Hafnium Oxide High-k Dielectrics with Subnanometer Equivalent Oxide Thickness by Reactive Sputtering

Zirconium-Doped Hafnium Oxide High-k Dielectrics with Subnanometer Equivalent Oxide Thickness by Reactive Sputtering

Atomic layer chemical vapor deposition of ZrO2-based dielectric films: Nanostructure and nanochemistry

Hafnium-based High-k Gate Dielectrics

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