Abstract:Photodetectors based on transition metal dichalcogenides (TMDs) have been widely reported in the literature and molybdenum disulfide (MoS2) has been the most extensively explored for photodetection applications. The properties of MoS2, such as direct band gap transition in low dimensional structures, strong light–matter interaction and good carrier mobility, combined with the possibility of fabricating thin MoS2 films, have attracted interest for this material in the field of optoelectronics. In this work, MoS… Show more
“…Hence, the needle-like TiS 3 flake has lower series resistance and therefore shows a faster response time 25 , 26 . Furthermore, due to the growth process, TiS 3 probably has more defects than MoS 2 , so it has a slower response time 27 . However, some part of the TiS 3 is buried under (passivated by) MoS 2 in the hybrid PD and is resulted in less ambient gas absorption, which speeds up the response time 27 .…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, due to the growth process, TiS 3 probably has more defects than MoS 2 , so it has a slower response time 27 . However, some part of the TiS 3 is buried under (passivated by) MoS 2 in the hybrid PD and is resulted in less ambient gas absorption, which speeds up the response time 27 . Figure 5 The measured Photocurrent as a function of laser intensities for ( a ) MoS 2 , ( b ) TiS 3 , and ( c ) TiS 3 -MoS 2 PDs under 532 nm laser illumination at a constant voltage of 10 V. Time trace measurement of ( d ) MoS 2 , ( e ) TiS 3 , and ( f ) TiS 3 -MoS 2 PDs under 532 nm laser illumination at an applied voltage of 10 V and laser intensity of 10 mW.…”
Layered metal chalcogenide materials are exceptionally appealing in optoelectronic devices thanks to their extraordinary optical properties. Recently, their application as flexible and wearable photodetectors have received a lot of attention. Herein, broadband and high-performance paper-based PDs were established in a very facile and inexpensive method by rubbing molybdenum disulfide and titanium trisulfide crystals on papers. Transferred layers were characterized by SEM, EDX mapping, and Raman analyses, and their optoelectronic properties were evaluated in a wavelength range of 405–810 nm. Although the highest and lowest photoresponsivities were respectively measured for TiS3 (1.50 mA/W) and MoS2 (1.13 μA/W) PDs, the TiS3–MoS2 heterostructure not only had a significant photoresponsivity but also showed the highest on/off ratio (1.82) and fast response time (0.96 s) compared with two other PDs. This advantage is due to the band offset formation at the heterojunction, which efficiently separates the photogenerated electron–hole pairs within the heterostructure. Numerical simulation of the introduced PDs also confirmed the superiority of TiS3–MoS2 heterostructure over the other two PDs and exhibited a good agreement with the experimental results. Finally, MoS2 PD demonstrated very high flexibility under applied strain, but TiS3 based PDs suffered from its fragility and experience a remarkable drain current reduction at strain larger than ± 0.33%. However, at lower strains, all PDs displayed acceptable performances.
“…Hence, the needle-like TiS 3 flake has lower series resistance and therefore shows a faster response time 25 , 26 . Furthermore, due to the growth process, TiS 3 probably has more defects than MoS 2 , so it has a slower response time 27 . However, some part of the TiS 3 is buried under (passivated by) MoS 2 in the hybrid PD and is resulted in less ambient gas absorption, which speeds up the response time 27 .…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, due to the growth process, TiS 3 probably has more defects than MoS 2 , so it has a slower response time 27 . However, some part of the TiS 3 is buried under (passivated by) MoS 2 in the hybrid PD and is resulted in less ambient gas absorption, which speeds up the response time 27 . Figure 5 The measured Photocurrent as a function of laser intensities for ( a ) MoS 2 , ( b ) TiS 3 , and ( c ) TiS 3 -MoS 2 PDs under 532 nm laser illumination at a constant voltage of 10 V. Time trace measurement of ( d ) MoS 2 , ( e ) TiS 3 , and ( f ) TiS 3 -MoS 2 PDs under 532 nm laser illumination at an applied voltage of 10 V and laser intensity of 10 mW.…”
Layered metal chalcogenide materials are exceptionally appealing in optoelectronic devices thanks to their extraordinary optical properties. Recently, their application as flexible and wearable photodetectors have received a lot of attention. Herein, broadband and high-performance paper-based PDs were established in a very facile and inexpensive method by rubbing molybdenum disulfide and titanium trisulfide crystals on papers. Transferred layers were characterized by SEM, EDX mapping, and Raman analyses, and their optoelectronic properties were evaluated in a wavelength range of 405–810 nm. Although the highest and lowest photoresponsivities were respectively measured for TiS3 (1.50 mA/W) and MoS2 (1.13 μA/W) PDs, the TiS3–MoS2 heterostructure not only had a significant photoresponsivity but also showed the highest on/off ratio (1.82) and fast response time (0.96 s) compared with two other PDs. This advantage is due to the band offset formation at the heterojunction, which efficiently separates the photogenerated electron–hole pairs within the heterostructure. Numerical simulation of the introduced PDs also confirmed the superiority of TiS3–MoS2 heterostructure over the other two PDs and exhibited a good agreement with the experimental results. Finally, MoS2 PD demonstrated very high flexibility under applied strain, but TiS3 based PDs suffered from its fragility and experience a remarkable drain current reduction at strain larger than ± 0.33%. However, at lower strains, all PDs displayed acceptable performances.
“…MoS2 has the indirect Eig = 1.2 eV and direct Edg = 1.8 eV bandgap in bulk and monolayer forms, respectively, and is non-toxic and thermally and chemically stable [7]. Some of the physical properties of MoS2, including a direct bandgap in low-dimensional structures, strong interaction of light with matter, and good carrier mobility, have aroused interest in this material in the field of optoelectronics and photodetection [8]. On the other hand, MoS2 exhibits excellent catalytic properties and good potential for photocatalytic production of solar fuels like hydrogen gas [9].…”
“…Reducing the thickness of the material increases its band gap to 1.9 eV, which also changes its nature from an indirect to a direct band structure . This appealing layer-dependent tunable nature provides superior light absorption and photodetection properties …”
Section: Introductionmentioning
confidence: 99%
“…16 This appealing layerdependent tunable nature provides superior light absorption and photodetection properties. 17 BP and MoS 2 are desirable candidates to create photoresponsive HSs. Current studies on these heterostructures indicate their amenability for high-performance photodetectors.…”
Heterostructures of two-dimensional
(2D) materials are being actively
explored for a plethora of applications because of their ability to
form stacked layers that provide access to a combination of favorable
electronic and optical properties. One such strategy is combining
p- and n-type 2D materials to create versatile p–n junctions
to modulate electrical and optoelectronic behaviors based on the type
of band alignment between the constituent materials. In this context,
black phosphorus (BP) and molybdenum disulfide (MoS2) offer
promising prospects for optoelectronics. However, studies on the photoresponsivity
(R), specific detectivity (D*),
and external quantum efficiency (EQE) in both forward and reverse
operating modes of a BP-MoS2 diode across a wide-wavelength
spectrum have not been reported. Herein, we demonstrate photodetection
capabilities of a heterostructure formed from layers of BP and MoS2 over a UV (280 nm)–vis (660 nm) wavelength range.
The heterojunction which can be electrically tuned by means of a gate
voltage achieves a rectification ratio of 47 while operating at a
relatively low electrical bias. High room-temperature responsivity
and detectivity values are obtained along with an EQE of 200%. Overall,
the detection spectrum of this heterostructure is wider than each
of the constituent materials on their own. This work adds important
fundamental knowledge in BP-MoS2 heterostructure research
at the nanoscale that will enable more efficient optoelectronic devices.
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