MoS2-Based Photodetectors Powered by Asymmetric Contact Structure with Large Work Function Difference

Kang, Zhe; Cheng, Yongfa; Zheng, Zhi; Cheng, Feng; Chen, Ziyu; Li, Luying; Tan, Xinyu; Xiong, Lun; Zhai, Tianyou; Gao, Yihua

doi:10.1007/s40820-019-0262-4

Cited by 63 publications

(41 citation statements)

References 53 publications

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“…Moreover, the photoresponsivity in the near-IR (~ 1.47 μm) wavelength range and mid-IR (~ 10 μm) wavelength range is about 5.5 and 4.5 A W −1 , respectively. The fitted rise and fall time for the bilayer PtSe 2 -based photodetector are much better than those 2D materials (such as BP, MoS 2 , and MoSe 2 )-based photodetectors [ 15 , 147 , 149 , 150 , 161 – 166 ]. These results indicate that 2D PtSe 2 is highly promising platforms for high sensitive and broadband optoelectronic application in the range of visible light to mid-IR wavelengths.…”

Section: Applicationsmentioning

confidence: 95%

“…Since graphene was discovered in 2004 [1], two-dimensional (2D) materials have attracted extensive attention due to their unique structure and outstanding properties [2][3][4][5][6][7]. Recently, layered 2D transition metal dichalcogenides (TMDCs) materials have become one of the hottest research topics due to a large potential in future nanoelectronics [8][9][10][11][12][13][14][15]. Unique physical phenomenon confining the transport of charge and heat in unique layered structure, which are not easily observed or measured in the related bulk crystal, has endowed them an attractive and promising 2D material for electronic, optoelectronic, and spintronic applications [16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

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Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges

et al. 2020

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HIGHLIGHTS • A comprehensive review of the recent development of two-dimensional (2D) PtSe 2 synthesis strategies has been extensively surveyed. • The applications of 2D PtSe 2 materials in areas, including opto/electric devices, photocatalysis, hydrogen evolution reaction, and sensors, have been reviewed. • Current challenges in the development of 2D PtSe 2 materials are identified, and outlooks toward unexplored research areas are suggested.

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Section: Applicationsmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges

et al. 2020

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“…For example, the Cu nanostructure/ZnO quantum dots hybrid architecture exhibited the ultrahigh UV photoresponsivity due to the enhanced plasmon scattering by the Cu nanostructures in the ZnO photoactive layer [15]. To date, various UV photodetectors have been demonstrated by the modification of nanoscale surface properties of photoactive materials, i.e., wide bandgap semiconductors of GaN, ZnO, TiO 2 , and SiC, as well as by the integration of advanced nanomaterials such as metallic nanoparticles (NPs), two-dimensional materials, and quantum dots [16][17][18][19][20]. For instance, the fabrication of heterostructures nanowires of semiconductors such as bicrystalline GaN, Al-doped ZnO/ZnO nanorings/PVK/PE-DOT:PSS and crystalline silicon/porous silicon have been realized for high UV photoresponsivity and fast response speed [21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance

et al. 2020

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HIGHLIGHTS • Enhancement of UV photoresponse by the incorporation of various plasmonic nanoparticles in the detector architecture. • Detailed explanation for the photocurrent enhancement mechanism by the finite-difference time domain (FDTD) simulation and strong plasmon absorption. • Systematic comparison and demonstration of the superior photoresponse of homogeneously alloyed AgAu nanoparticles as compared to the monometallic nanoparticles. ABSTRACT Very small metallic nanostructures, i.e., plasmonic nanoparticles (NPs), can demonstrate the localized surface plasmon resonance (LSPR) effect, a characteristic of the strong light absorption, scattering and localized electromagnetic field via the collective oscillation of surface electrons upon on the excitation by the incident photons. The LSPR of plasmonic NPs can significantly improve the photoresponse of the photodetectors. In this work, significantly enhanced photoresponse of UV photodetectors is demonstrated by the incorporation of various plasmonic NPs in the detector architecture. Various size and elemental composition of monometallic Ag and Au NPs, as well as bimetallic alloy AgAu NPs, are fabricated on GaN (0001) by the solid-state dewetting approach. The photoresponse of various NPs are tailored based on the geometric and elemental evolution of NPs, resulting in the highly enhanced photoresponsivity of 112 A W −1 , detectivity of 2.4 × 10 12 Jones and external quantum efficiency of 3.6 × 10 4 % with the high Ag percentage of AgAu alloy NPs at a low bias of 0.1 V. The AgAu alloy NP detector also demonstrates a fast photoresponse with the relatively short rise and fall time of less than 160 and 630 ms, respectively. The improved photoresponse with the AgAu alloy NPs is correlated with the simultaneous effect of strong plasmon absorption and scattering, increased injection of hot electrons into the GaN conduction band and reduced barrier height at the alloy NPs/GaN interface.

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“…These data points in Fig. 6d are extracted from recently reported self-driven photodetectors based on different materials and working mechanisms 19,[36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52][53] , and the detailed performance metrics are listed in Supplementary Table 1. In general, our device shows a relatively high responsivity, and the highest reported I ph /I dark ratio under a zero bias, which origins from the proposed asymmetrical device structure featuring both asymmetrical MS junctions for a high zero-bias photocurrent and an ultralow dark current.…”

Section: Modeling and Analysis Of The Self-driven Photodetectormentioning

confidence: 99%

Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces

Zhou

Shou-Yong

et al. 2020

npj 2D Mater Appl

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Self-driven photodetectors that can detect light without any external voltage bias are important for low-power applications, including future internet of things, wearable electronics, and flexible electronics. While two-dimensional (2D) materials exhibit good optoelectronic properties, the extraordinary properties have not been fully exploited to realize high-performance self-driven photodetectors. In this paper, a metal–semiconductor–metal (MSM) photodetector with graphene and Au as the two contacts have been proposed to realize the self-driven photodetector. Van der Waals contacts are formed by dry-transfer methods, which is important in constructing the asymmetrical MSM photodetector to avoid the Fermi-level pinning effect. By choosing graphene and Au as the two contact electrodes, a pronounced photovoltaic effect is obtained. Without any external bias, the self-driven photodetector exhibits a high responsivity of 7.55 A W−1 and an ultrahigh photocurrent-to-dark current ratio of ~108. The photodetector also shows gate-tunable characteristics due to the field-induced Fermi-level shift in the constituent 2D materials. What is more, the high linearity of the photodetector over almost 60 dB suggests the easy integration with processing circuits for practical applications.

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MoS2-Based Photodetectors Powered by Asymmetric Contact Structure with Large Work Function Difference

Cited by 63 publications

References 53 publications

Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges

Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges

Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance

Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces

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