MoS2 memristor with photoresistive switching

Abstract

A MoS2 nanosphere memristor with lateral gold electrodes was found to show photoresistive switching. The new device can be controlled by the polarization of nanospheres, which causes resistance switching in an electric field in the dark or under white light illumination. The polarization charge allows to change the switching voltage of the photomemristor, providing its multi-level operation. The device, polarized at a voltage 6 V, switches abruptly from a high resistance state (HRSL6) to a low resistance state (LRSL6) with the On/Off resistance ratio of about 10 under white light and smooth in the dark. Analysis of device conductivity in different resistive states indicates that its resistive state could be changed by the modulation of the charge in an electric field in the dark or under light, resulting in the formation/disruption of filaments with high conductivity. A MoS2 photomemristor has great potential as a multifunctional device designed by using cost-effective fabrication techniques.

Hierarchical Cobalt Sulfide/Molybdenum Sulfide Heterostructure as Bifunctional Electrocatalyst towards Overall Water Splitting

“…HR‐TEM images of C 2 M 1 S were collected and fast Fourier transformation (FFT) followed by inverse FFT (IFFT) at various regions marked as R1, R2 and R3 (as shown in Figure a–b) were performed as shown in Figure c‐e. The lattice spacing was measured in the R1 region and the measured value matched well with the previously reported value for 2H‐MoS 2 (103) plane . The interlayer spacing analysis in the R2 region confirmed the presence of (002) plane of MoS 2 .…”

Molybdenum Disulfide Nanosheet/Quantum Dot Dynamic Memristive Structure Driven by Photoinduced Phase Transition

“…At low bias (0.2–0.9 V), the current increases linearly with increasing voltage (Figure c), which is a typical behavior of thermal electron emission, which can be explained by a current above the graphene‐MoS 2 barrier . At higher voltage, the current exhibits a sublinear behavior, that is, from 0.9 to 1.6 V, I ∼ In( V ) and from 1.6 to 4 V, I ∼ V 0.32 , which differs from the behavior of the Schottky barrier ( I ∼ exp( V )) or space charge limited current (SCLC) ( I ∼ V n , n ≥ 2).…”

Frequency locking and controllable chaos through exceptional points in optomechanics

“…Chaotic behaviour is useful for generating random numbers and implementing secret information process-ing (see [24] and references therein). However, to apply chaos into a secret communication scheme, good controllability and low-power threshold are required [25], [26]. Low-driving threshold chaos has been achieved in [25], using optical PT-symmetry in an optomechanical system; while controllable chaos with a low-driving threshold has been investigated in an electro-optomechanical system in [26].…”

“…However, to apply chaos into a secret communication scheme, good controllability and low-power threshold are required [25], [26]. Low-driving threshold chaos has been achieved in [25], using optical PT-symmetry in an optomechanical system; while controllable chaos with a low-driving threshold has been investigated in an electro-optomechanical system in [26]. A system that can handle these issues concerning locking phenomenon and chaos, would be a good benchmark for technological applications based on nonlinear optomechanics.…”