MoS2/p-Si heterojunction with graphene interfacial layer for high performance 940 nm infrared photodetector

Seo, Wondeok; Park, Woojin; Seo, Hyun Young; Oh, Se‐Young; Kwon, O’Dae; Jeong, Soo Hong; Kim, Do Hyeong; Kim, Min Jeong; Lee, Sang Kyung; Lee, Byoung Hun; Cho, Byungjin

doi:10.1016/j.apsusc.2022.154485

Cited by 13 publications

(3 citation statements)

References 40 publications

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“…Figure 8(b) shows a recently reported p-WSe 2 /n-Ge photodetector with ultrafast photoresponse, exhibiting fast rising and falling of approximately 3 µs under 638 nm illumination and 30 µs rising and 5 µs falling under 1550 nm infrared illumination [322]. Similar photodetectors based on type-II junctions between layered semiconductors and Si or Ge have been reported with various material combinations, including n-MoS 2 /p-Si [292,323], n-WS 2 /p-Si [292,324], p-WS 2 /n-Si [279], n-MoTe 2 /n-Si [325], n-SnSe 2 /p-Si [326], n-MoS 2 /p-Ge [327], n-WS 2 /n-Ge [328], and p-MoTe 2 /i-Ge [329].…”

Section: Layered-traditional-heterostructure-based P-n Junctionsupporting

confidence: 65%

Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration

Chen

Deng

Zhang

et al. 2023

Int. J. Extrem. Manuf.

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As Moore's law deteriorates, the research and development of new materials system are necessary for moving towards the post Moore’s era. Traditional semiconductor materials, such as silicon, have been the cornerstone of modern technologies for more than half a century. This has been due to the abundant research and engineering on new techniques to continuously enrich silicon-based materials system and, subsequently, to develop better performed silicon based devices. Meanwhile, in emerging post Moore’s era, layered semiconductor materials, such as transition metal dichalcogenides, have piqued the interest of researchers due to their unique electronic and optoelectronic properties to power up the new era of next generation electronics. As a result, techniques to engineer the properties of layered semiconductors have expanded the possibilities of layered semiconductor-based devices. However, there are still few serious limitations on layered semiconductor synthesis and engineering, impeding the utilization of layered semiconductor-based devices for mass applications. As a practical alternative, heterogeneous integration between layered and traditional semiconductors provides valuable opportunities to combine the unique properties of layered semiconductors with well-developed traditional semiconductors materials system. Here, we provide an overview of the comparative coherence between layered and traditional semiconductors, starting with transition metal dichalcogenides as the representation of layered semiconductors. We highlight the meaningful opportunities presented by the heterogeneous integration of layered semiconductors with traditional semiconductors, which might be the optimum strategy for emerging semiconductor research community and chip industry in the next few decades.

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Section: Layered-traditional-heterostructure-based P-n Junctionsupporting

confidence: 65%

Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration

Chen

Deng

Zhang

et al. 2023

Int. J. Extrem. Manuf.

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“…Jia et al designed a self-powered broadband photodetector by constructing a heterojunction from a 2D MoS 2 film and bulk GaAs. The MoS 2 /GaAs heterojunction photodetector exhibited a broad response spectrum from deep ultraviolet (DUV) to near-infrared (NIR), a high responsivity of 35.2 mA/W, a high specific detection rate of 1.96 × 10 13 Jones, and zero-bias pressure fast response speed of 3.4/15.6 μs. − …”

Section: Introductionmentioning

confidence: 99%

Ultralow-Noise MoS₂/Type II Superlattice Mixed-Dimensional van der Waals Barrier Long-Wave Infrared Detector

Xiao,

Nie,

Jiang

et al. 2024

ACS Appl. Mater. Interfaces

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Low-noise, high-performance long-wave infrared detectors play a crucial role in diverse applications, including in the industrial, security, and medical fields. However, the current performance of long-wave detectors is constrained by the noise associated with narrow bandgaps. Therefore, exploring novel heterostructures for long-wavelength infrared detection is advantageous for the development of compact and high-performance infrared sensing. In this investigation, we present a MoS2/type II superlattice mixed-dimensional van der Waals barrier long-wave infrared detector (Mixed-vdWH). Through the design of the valence band barrier, substantial suppression of device dark noise is achieved, resulting in 2 orders of magnitude reduction in dark current. The device exhibits outstanding performance, with D* reaching 4 × 1010 Jones. This integration approach synergizes the distinctive properties of two-dimensional layered materials (2DLM) with the well-established processing techniques of traditional three-dimensional semiconductor materials, offering a compelling avenue for the large-scale integration of 2DLM.

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“…Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are promising materials for use in a variety of optoelectronic device applications due to their tunable band gap, simple fabrication, intriguing excitonic properties, and high carrier mobility. − Therefore, there have been extensive efforts to exploit these outstanding properties of 2D TMDCs for optoelectronics, especially photodetectors. − Photodetectors are basic components of optoelectronics and have applications in various fields such as thermal imaging cameras, optical communications, machine vision technology, and more. However, 2D TMDCs have low light absorption due to their atomic-level thinness, posing a limitation for sensitive photodetection …”

mentioning

confidence: 99%

Enhanced Photodetection Performance of an In Situ Core/Shell Perovskite-MoS₂ Phototransistor

Sim,

Ryoo,

Kim

et al. 2024

ACS Nano

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MoS2/p-Si heterojunction with graphene interfacial layer for high performance 940 nm infrared photodetector

Cited by 13 publications

References 40 publications

Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration

Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration

Ultralow-Noise MoS₂/Type II Superlattice Mixed-Dimensional van der Waals Barrier Long-Wave Infrared Detector

Enhanced Photodetection Performance of an In Situ Core/Shell Perovskite-MoS₂ Phototransistor

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MoS2/p-Si heterojunction with graphene interfacial layer for high performance 940 nm infrared photodetector

Cited by 13 publications

References 40 publications

Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration

Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration

Ultralow-Noise MoS2/Type II Superlattice Mixed-Dimensional van der Waals Barrier Long-Wave Infrared Detector

Enhanced Photodetection Performance of an In Situ Core/Shell Perovskite-MoS2 Phototransistor

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Product

Resources

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MoS2/p-Si heterojunction with graphene interfacial layer for high performance 940 nm infrared photodetector

Ultralow-Noise MoS₂/Type II Superlattice Mixed-Dimensional van der Waals Barrier Long-Wave Infrared Detector

Enhanced Photodetection Performance of an In Situ Core/Shell Perovskite-MoS₂ Phototransistor