MOSFET bias dependent series resistance extraction from RF measurements

New RF extrinsic resistances extraction procedure for deep‐submicron MOS transistors

“…The most widely used RF methods to extract the extrinsic series resistances have been proposed in the literature by Lovelace [17], Torres-Torres [18], Raskin [19] and Bracale [20]. Besides those popular RF extraction methods there are some that require the extraction of intermediate parameters before the series resistances extraction [14][15][16] or complex mathematical optimization routines [13].…”

“…This method requires the MOSFET biased in strong inversion with V gs 4V T and V ds 5 0 V [18]. Under these bias conditions the device is symmetric (C gs 5 C gd 5 C), g m tends to zero and g d increases with V gs .…”

Mobility degradation and transistor asymmetry impact on field effect transistor access resistances extraction

“…(2) and (3), respectively, a 22À12 ¼ a 22 ða À1 þ1Þ and a 12 ¼ a 22 ðaþ1Þ , the asymmetry factor can be directly determined as:…”

“…For this purpose, the extrinsic series resistances have to be firstly de-embedded from the measured S-parameters of the device. Several extraction methods based on DC or RF measurements are proposed in the literature to extract the extrinsic series resistances, however only the RF characterization methods allow the extraction of the three series resistances (R ge , R de , R se ) [1][2][3][4].…”

Advanced RF MOSFET´s for Microwave and Millimeter Wave Applications: RF Characterization Issues

“…The RF methods allow determining independently the three series resistances R se , R de and R ge . The most widely used RF methods to extract the extrinsic series resistances have been proposed in the literature by (Lovelace et al, 1994), (Torres-Torres et al, 2003), (Raskin et al, 1998) and (Bracale et al, 2000). It is worth to mention that some of those RF methods require the extraction of intermediate parameters before the series resistances extraction (Pascht et al, 2002) and other methods require complex mathematical optimization routines (Lee et al, 1997).…”