MOSFET dynamic thermal sensor for IC testing applications

Reverter, Ferran; Perpiñà, X.; Barajas, E.; León, Javier; Vellvehı́, M.; Jordà, X.; Altet, Josep

doi:10.1016/j.sna.2016.03.016

Cited by 11 publications

(14 citation statements)

References 23 publications

(41 reference statements)

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“…According to [37], the sensitivity of such thermal sensors is enhanced when: they are biased in strong inversion with a drain to source current of 20 µA and their channel width (W)-length (L) aspect ratio is set for 1.5/24. The dynamic equivalent resistance of this device and the parasitic capacitance ensure that its 3-dB cut-off frequency is higher than 160 kHz, allowing the thermal acquisition in the studied frequency ranges [36], [38].…”

Section: A Class a Pa Description And Layoutmentioning

confidence: 99%

“…This output power is referred to as , or , when the PA is driven with one (homodyne) or two (heterodyne) sine waves. The total input power used in the experiments is comprised between -10 and -3 dBm, to keep it below the PA 1-dB CP at the fc,G considered (0 dBm at 620 MHz,-2.5 dBm at 440 MHz [38]).…”

Section: A Pa Packaging Biasing and Drivingmentioning

confidence: 99%

“…The IR images have been acquired at fR = 376 Hz and an integration time (tint) of 450 s, leading to 2.510 4 images processed at f. Such values are selected since they respectively are the highest fR, the shortest tint, and the smallest image number for which the camera signal to noise ratio is acceptable to perform a fast and proper lock-in processing, as demonstrated in [38]. In such images, the die surface IR emissivity () has been corrected for each material without using any coating [44].…”

Section: B Ir-lit System Ir Images Acquisition and Processingmentioning

confidence: 99%

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Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging

Perpiñà

Reverter

León

et al. 2019

IEEE Trans. Instrum. Meas.

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 Abstract-The viability of using off-chip single-shot imaging techniques for local thermal testing in integrated Radio Frequency (RF) power amplifiers (PA's) is analyzed. With this approach, the frequency response of the output power and power gain of a Class A RF PA is measured, also deriving information about the intrinsic operation of its transistors. To carry out this case study, the PA is heterodynally driven, and its electrical behavior is down converted into a lower frequency thermal field acquirable with an InfraRed Lock-In Thermography (IR-LIT) system. After discussing the theory, the feasibility of the proposed approach is demonstrated and assessed with thermal sensors monolithically integrated in the PA. As crucial advantages to RF-testing, this local approach is noninvasive and demands less complex instrumentation than the mainstream commercially available solutions.

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Section: A Class a Pa Description And Layoutmentioning

confidence: 99%

Section: A Pa Packaging Biasing and Drivingmentioning

confidence: 99%

Section: B Ir-lit System Ir Images Acquisition and Processingmentioning

confidence: 99%

See 1 more Smart Citation

Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging

Perpiñà

Reverter

León

et al. 2019

IEEE Trans. Instrum. Meas.

Self Cite

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“…As shown in Figure 10, the current response is linear with the temperature and the obtained sensitivity (CST) has an order of magnitude in A/K which is reasonable to be detected. Note that other thermal detectors like thermocouples or CMOS sensors [24][25][26][27][28] have a voltage response to temperature. Thermocouples, for instance, have a typical voltage response of 50 V/K and MOSFET sensor is reported to have 1.6 mV/K [25].…”

Section: Channel Current-temperature Phase Extractionmentioning

confidence: 99%

“…Additional investigations and simulations brought some breakthrough in this modulator, when it appears that thermal activation which could be related to the absorption of RF radiation, for instance, enables turning the device into a thermal sensor. Indeed, several types of material and size [14,15] of siliconbased/CMOS nanoscale thermal sensors become much more desirable for integration in microelectronics circuitry [16][17][18][19][20][21][22][23][24][25][26][27][28]. So, in our previous work [29] we presented a dualmode device: Silicon-On-Insulator Photo-Activated Modulator (SOIPAM) combined with Silicon-On-Insulator ThermoActivated Modulator (SOITAM).…”

Section: Introductionmentioning

confidence: 99%

Small Signals’ Study of Thermal Induced Current in Nanoscale SOI Sensor

Mandelbaum¹,

Gadasi²,

Chelly³

et al. 2017

Journal of Sensors

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A new nanoscale SOI dual-mode modulator is investigated as a function of optical and thermal activation modes. In order to accurately characterize the device specifications towards its future integration in microelectronics circuitry, current time variations are studied and compared for "large signal" constant temperature changes, as well as for "small signal" fluctuating temperature sources. An equivalent circuit model is presented to define the parameters which are assessed by numerical simulation. Assuring that the thermal response is fast enough, the device can be operated as a modulator via thermal stimulation or, on the other hand, can be used as thermal sensor/imager. We present here the design, simulation, and model of the next generation which seems capable of speeding up the processing capabilities. This novel device can serve as a building block towards the development of optical/thermal data processing while breaking through the way to all optic processors based on silicon chips that are fabricated via typical microelectronics fabrication process.

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Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

Hasan,

Khan,

Shahzadi

et al. 2024

Adv Funct Materials

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In recent years, silicon‐based room temperature Terahertz (THz) detectors have become the most optimistic research area because of their high speed, low cost, and unimpeded compatibility with mainstream complementary metal‐oxide‐semiconductor (CMOS) device technologies. However, Silicon (Si) suffers from low responsivity and high noise at THz frequencies. In this review, the recent advances in Si‐based THz detectors using silicon‐on‐insulator (SOI) substrates are presented. These offer several advantages over bulk counterparts, such as reduced parasitic capacitance, enhanced electric field confinement, and improved thermal isolation. The different types of THz detectors exploiting SOI substrate, such as conventional metal‐oxide‐semiconductor field effect transistors (MOSFETs), junction‐less MOSFETs, junction‐less nanowires field effect transistors (JLNWFETs), micro‐electromechanical system (MEMS), metal‐semiconductor‐metal (MSM) structures, and single electron transistor (SET), are discussed, and their key performances in terms of responsivity, noise equivalent power (NEP), bandwidth, and dynamic range are compared. The challenges and opportunities for further improvement of SOI THz detectors, such as device scaling, integration, and modulation, are also highlighted. This review may offer compelling evidence supporting the idea that SOI THz detectors have the potential to facilitate high performance, low power consumption, and scalability—qualities essential for advancing next‐level technologies.

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MOSFET dynamic thermal sensor for IC testing applications

Cited by 11 publications

References 23 publications

Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging

Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging

Small Signals’ Study of Thermal Induced Current in Nanoscale SOI Sensor

Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

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