MOSFET electron inversion layer mobilities - a physically based semi-empirical model for a wide temperature range

High temperature study of flexible silicon-on-insulator fin field-effect transistors

“…The reduction of the transconductance peak in Figure 4 as a function of the temperature is explained by the mobility lowering due to increased phonon scattering at elevated temperatures. 8,9 Further, to confirm our results with a quantitative analysis, the extracted l 0 of the FinFETs is shown in Figure 5. The low-field mobility is extracted in linear regime (V ds ¼ À0.05 V) using the Y ¼ I ds /(g m ) 1/2 function method.…”

“…The decrease of threshold voltage (V th ) with temperature tends to increase drain current, while the reduction of mobility due to increase of phonon scattering with temperature tends to decrease drain current, same as in a conventional MOSFET. 8,9 The compensation of these opposing effects at V gs ¼ À0.8 V and at V gs ¼ À0.9 V for long and short devices, respectively, leads to unique points in the characteristics with zero temperature coefficient (ZTC). Inset of Figure 2(a) shows the output characteristics (I ds -V ds ) of long and short FinFETs at 25 C and at 150 C. These curves clearly show that the drive current of the FinFETs decreases with temperature as expected without any significant degradation after release.…”

Managing Temperature Effects in Nanoscale Adaptive Systems

“…however, the reduced thermal velocity also reduces the screening effect [50], and this reduction in screening dominates the temperature dependence ( ). The electric field screening effect is also weakened by the reduced thermal velocity ( , not as in the limit).…”

Temperature Dependence of Electrical Parameters of Silicon-on-Insulator Triple Gate n-Channel Fin Field Effect Transistor

“…10, respectively. In a FinFET device, the decrease of threshold voltage with temperature tends to increase drain current in weak inversion while the mobility reduction causes a decrease in strong inversion [22,23]. A gate bias point exists when these opposing effects compensate each other, thus exhibiting the socalled ZTC (zero temperature coefficient) point [24,25].…”