MOSFET mismatch modeling: a new approach

Klimach, Hamilton; Arnaud, Alfredo; Galup-Montoro, Carlos; Schneider, M.C.

doi:10.1109/mdt.2006.20

Cited by 13 publications

(2 citation statements)

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“…7. Equation (15) indicates that we can keep the same variability of (¦I d /I d ) as that of the strong inversion even in the weak inversion using at most about 9 times as large as the W-L-product size for 25C, and at most about 25 times as large as the W-L-product size for ¹70C.…”

Section: Temperature Characteristics Obtained By Hand Calculation Our...mentioning

confidence: 99%

“…Several attempts have been studied and proposed in the light of one-equation metal-oxide-semiconductor transistor (MOST) models and analog circuit design methodologies. Two main charge-based one-equation MOST models have been proposed: the Enz-Krummenacher-Vittoz (EKV) [1][2][3][4][5][6][7][8][9] and advanced compact MOSFET (ACM) [10][11][12][13][14][15][16][17][18] models.…”

Section: Introductionmentioning

confidence: 99%

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Analog design optimization methodology for ultralow-power circuits using intuitive inversion-level and saturation-level parameters

Eimori

Anami

Yoshimatsu

et al. 2014

Jpn. J. Appl. Phys.

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A comprehensive design optimization methodology using intuitive nondimensional parameters of inversion-level and saturation-level is proposed, especially for ultralow-power, low-voltage, and high-performance analog circuits with mixed strong, moderate, and weak inversion metal–oxide–semiconductor transistor (MOST) operations. This methodology is based on the synthesized charge-based MOST model composed of Enz–Krummenacher–Vittoz (EKV) basic concepts and advanced-compact-model (ACM) physics-based equations. The key concept of this methodology is that all circuit and system characteristics are described as some multivariate functions of inversion-level parameters, where the inversion level is used as an independent variable representative of each MOST. The analog circuit design starts from the first step of inversion-level design using universal characteristics expressed by circuit currents and inversion-level parameters without process-dependent parameters, followed by the second step of foundry-process-dependent design and the last step of verification using saturation-level criteria. This methodology also paves the way to an intuitive and comprehensive design approach for many kinds of analog circuit specifications by optimization using inversion-level log-scale diagrams and saturation-level criteria. In this paper, we introduce an example of our design methodology for a two-stage Miller amplifier.

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Section: Temperature Characteristics Obtained By Hand Calculation Our...mentioning

confidence: 99%