MOSFET modeling gets physical

Miura-Mattausch, Mitiko; Mattausch, H. J.; Arora, N.D.; Yang, Chih-Chao

doi:10.1109/101.968914

Cited by 15 publications

(5 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…al. [109] pointed out that to the future requirements of the technology, the surface potential model based on drift-diffusion approximation is essential.…”

Section: Double-gate (Dg) Mosfetmentioning

confidence: 99%

Advanced MOSFET Technologies for Next Generation Communication Systems - Perspective and Challenges: A Review

Himangi¹,

Srivastava²,

Singh³

2018

JESTR

View full text Add to dashboard Cite

In this review, authors have retrospect the state-of-art dimension scaling and emerging other non-conventional MOSFET structures particularly, the Double-Gate (DG) MOSFET and Cylindrical Surrounding Double-Gate (CSDG) MOSFET. These are presented for the future devices to reduce the short channel effects for the next generation communication system as the dimension of device approaches to the nanometer regime. The discussion on advantages and compact modeling approaches of both the MOSFETs have been presented. Moreover, these compact models are very useful to understand the physical characteristics of devices and also necessary for the circuit simulators, which are presently most growing research areas. Therefore, a review of the various approaches to developing the complete compact models for DG MOSFETs and CSDG MOSFET is necessary. The significant effect that is the short channel effects are also looked upon with the help of reported literatures. In addition to this, with the next generation communication prospective, the DG MOSFETs and CSDG MOSFETs have been discussed, which prove to be advantageous for the Terahertz (THz) frequency regime where high speed data transmission and reduced power consumption are the major requirements.

show abstract

“…al. [109] pointed out that to the future requirements of the technology, the surface potential model based on drift-diffusion approximation is essential.…”

Section: Double-gate (Dg) Mosfetmentioning

confidence: 99%

Advanced MOSFET Technologies for Next Generation Communication Systems - Perspective and Challenges: A Review

Himangi¹,

Srivastava²,

Singh³

2018

JESTR

View full text Add to dashboard Cite

show abstract

“…Where L eff is the effective channel length; N sub is admixture concentration of the substrate [10].…”

Section: Ldmos Devices and Hisim-hv Model Descriptionmentioning

confidence: 99%

Parameter extraction of SOILDMOS based on the HISIM-HV model

Tianle

Wang

et al. 2010

2010 International Conference on Microwave and Millimeter Wave Technology

View full text Add to dashboard Cite

As an RF power device, SOILDMOS has a huge market demand and broad development prospects. In this paper ,we conduct extensive measurement of the SOILDMOS chip using the vector network analyzer, microwave probe station, semiconductor parameter analyzer. The measuring results are obtained with Agilent IC-CAP 2008. With these results, SOILDMOS can be modeled based on the HiSIM-HV model. The parameter extraction and curve fitting are carried out with the IC-CAP tool. The experimental results show that the parameters extracted based on the HiSIM-HV model perform well.

show abstract

“…We have been investigating a bulk-current model for our circuit simulation model, using surface potential as the physical core [13]. The accuracy and validity of the model are investigated for measurements over a wide range of device sizes in one model parameter set [14,15]. Moreover, increase of power dissipation due to the bulk current is expected for advanced MOSFET technologies.…”

Section: Introductionmentioning

confidence: 99%

A Bulk‐Current Model for Advanced MOSFET Technologies Without Binning: Substrate Current and Fowler‐Nordheim Current

Inagaki

Sadachika

Navarro³

et al. 2009

IEEJ Transactions Elec Engng

View full text Add to dashboard Cite

A bulk-current model for advanced metal oxide semiconductor field effect transistors (MOSFETs) is proposed and implemented. The model consists of an impact ionization mechanism, the drain to bulk current and a tunneling mechanism, the gate to bulk current, and requires totally 21 model parameters covering all bias conditions. The simulated results with the parameter values reproduce measurements for any device size without binning. Validity of the model has been tested with circuits, which are sensitive to the change of the stored charge due to impact ionization current and tunneling current. 

show abstract

MOSFET modeling gets physical

Cited by 15 publications

References 19 publications

Advanced MOSFET Technologies for Next Generation Communication Systems - Perspective and Challenges: A Review

Advanced MOSFET Technologies for Next Generation Communication Systems - Perspective and Challenges: A Review

Parameter extraction of SOILDMOS based on the HISIM-HV model

A Bulk‐Current Model for Advanced MOSFET Technologies Without Binning: Substrate Current and Fowler‐Nordheim Current

Contact Info

Product

Resources

About