Mössbauer study of 119 Sn in 119 In* implanted 3C-SiC

Abstract

119 Sn Mössbauer measurements have been made on a 3C-SiC single crystal implanted with 60 keV precursor radioactive 119 In * ions at ISOLDE/CERN. Spectra collected at sample temperatures of 300-670 K have been analysed in terms of two single lines and a quadrupole split doublet, which based on their isomer shifts are assigned respectively to Sn ions located on substitutional Si sites (Sn Si ) and interstitial sites (Sn I ) and in defect complexes near substitutional sites. The substitutional Sn Si fraction increases from 25% at room temperature to 60% at 680 K.