Mott-transition-based RRAM

Wang, Yue; Kang, Kyung Mun; Kim, Minjae; Lee, Hong Sub; Waser, Rainer; Wouters, Dirk J.; Dittmann, Regina; Yang, J. Joshua; Park, Hyung Ho

doi:10.1016/j.mattod.2019.06.006

Cited by 69 publications

(28 citation statements)

References 121 publications

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“…The reasons for fast oxygen diffusion along extended defects in LSMO are not clear, [21][22][23] however; such knowledge is essential for tuning oxide-ion transport in LSMO for application as a cathode material in solid oxide fuel cells (SOFC) [24][25][26][27] or as the active material in memristive devices. [28][29][30][31][32][33][34] In ionic solids, there are two possibilities to explain the pheno menon of fast diffusion along dislocations [23] (see Figure 1a): (i) diffusion along the dislocation core is faster than in the bulk on account of the activation barrier for ion migration being lower in the core than in the bulk, as is the case in metals; (ii) the concentration of the defects responsible for diffusion is strongly enhanced in a space-charge tube surrounding the dislocation. [23,35,36] For LSMO, literature provides at present an unclear picture.…”

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confidence: 99%

Faster Diffusion of Oxygen Along Dislocations in (La,Sr)MnO_3+δ Is a Space‐Charge Phenomenon

Börgers

Kler

Ran

et al. 2021

Adv Funct Materials

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In displaying accelerated oxygen diffusion along extended defects, (La,Sr)MnO 3+δ is an atypical acceptor-doped perovskite-type oxide. In this study, 18 O/ 16 O diffusion experiments on epitaxial thin films of La 0.8 Sr 0.2 MnO 3+δ and molecular dynamics (MD) simulations are combined to elucidate the origin of this phenomenon for dislocations: Does diffusion occur along dislocation cores or along space-charge tubes? Transmission electron microscopy studies of the films revealed dislocations extending from the surface. 18 O penetration profiles measured by secondary ion mass spectrometry indicated (slow) bulk diffusion and faster diffusion along dislocations. Oxygen tracer diffusivities obtained for temperatures 873 ≤ T [K] ≤ 973were over two orders of magnitude higher for dislocations than for the bulk. The activation enthalpy of oxygen diffusion along dislocations, of (2.95 ± 0.21) eV, is surprisingly high relative to that for bulk diffusion, (2.67 ± 0.13) eV. This result militates against fast diffusion along dislocation cores. MD simulations confirmed no accelerated migration of oxide ions along dislocation cores. Faster diffusion of oxygen along dislocations in La 0.8 Sr 0.2 MnO 3+δ is thus concluded to occur within space-charge tubes in which oxygen vacancies are strongly accumulated. Reasons for and the consequences of space-charge zones at extended defects in manganite perovskites are discussed.

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confidence: 99%

Faster Diffusion of Oxygen Along Dislocations in (La,Sr)MnO_3+δ Is a Space‐Charge Phenomenon

Börgers

Kler

Ran

et al. 2021

Adv Funct Materials

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“…Briefly, our proposed mechanism, involving valence change memory effect, [ 36 ] depicts how the oxygen‐rich areas (insulating) were formed and the electro‐conducting area (“bandwidth”) of the VO x main channel changed due to the synergy and compensation of V G and V DS . It is worth noting that this mechanism model can be applied not only to measurements in which V G = −1 ↹ 1 V but also to measurements in which V G = 1 ↹ −1 V, as shown in Figure S6 in the Supporting Information.…”

Section: Resultsmentioning

confidence: 99%

Femtojoule‐Power‐Consuming Synaptic Memtransistor Based on Mott Transition of Multiphasic Vanadium Oxides

Iqbal

Duy

Kang

et al. 2021

Adv Funct Materials

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To realize the potential of Mott transition of multiphasic vanadium oxides (VO x ) for memory applications, the development of VO x memtransistors on SiO 2 wafer is introduced. Through electrical characterizations, the volatile memory behaviors of the VO x memtransistors are observed in both twoand three-terminal measurements. Their capacitive memory and resistive switching mechanisms are strongly related to the mixed VO x /SiO 2 interface (called VSiO x ). VSiO x supports the Mott transition in VO x at low bias voltages (<0.5 V), leading to the low power consumption of the memtransistor. Moreover, the fast switching time (≈35 ns) and tunable memory retention with the synaptic functions (potentiation and depression) of the memtransistors (by using the gate and drain biases) are demonstrated. Overall, the findings open up major opportunities for constructing ultrafast and femto-joule power-consuming neuromorphic devices.

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“…[1] Both functionalities are uniquely offered by the Mott metal-insulator phase transition (MIT) in strongly correlated oxides. Nanoscale control over the volatile and persistent regimes of switching in these materials would open an exciting opportunity for designing high-density neuromorphic networks, [2][3][4] resistive memories, [5,6] coupled oscillators, [7,8] and other applications. [9][10][11] Despite its importance, the nanoscopic mechanism driving these functionalities is poorly explored, in part due to the lack of in situ nanoscale characterization.…”

Section: Control Of the Metal-insulator Phase Transition Is Vital Formentioning

confidence: 99%

Nanoscale Imaging and Control of Volatile and Non‐Volatile Resistive Switching in VO₂

Shabalin

Valle

Hua

et al. 2020

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Control of the metal‐insulator phase transition is vital for emerging neuromorphic and memristive technologies. The ability to alter the electrically driven transition between volatile and non‐volatile states is particularly important for quantum‐materials‐based emulation of neurons and synapses. The major challenge of this implementation is to understand and control the nanoscale mechanisms behind these two fundamental switching modalities. Here, in situ X‐ray nanoimaging is used to follow the evolution of the nanostructure and disorder in the archetypal Mott insulator VO2 during an electrically driven transition. Our findings demonstrate selective and reversible stabilization of either the insulating or metallic phases achieved by manipulating the defect concentration. This mechanism enables us to alter the local switching response between volatile and persistent regimes and demonstrates a new possibility for nanoscale control of the resistive switching in Mott materials.

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Mott-transition-based RRAM

Cited by 69 publications

References 121 publications

Faster Diffusion of Oxygen Along Dislocations in (La,Sr)MnO_3+δ Is a Space‐Charge Phenomenon

Faster Diffusion of Oxygen Along Dislocations in (La,Sr)MnO_3+δ Is a Space‐Charge Phenomenon

Femtojoule‐Power‐Consuming Synaptic Memtransistor Based on Mott Transition of Multiphasic Vanadium Oxides

Nanoscale Imaging and Control of Volatile and Non‐Volatile Resistive Switching in VO₂

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Mott-transition-based RRAM

Cited by 69 publications

References 121 publications

Faster Diffusion of Oxygen Along Dislocations in (La,Sr)MnO3+δ Is a Space‐Charge Phenomenon

Faster Diffusion of Oxygen Along Dislocations in (La,Sr)MnO3+δ Is a Space‐Charge Phenomenon

Femtojoule‐Power‐Consuming Synaptic Memtransistor Based on Mott Transition of Multiphasic Vanadium Oxides

Nanoscale Imaging and Control of Volatile and Non‐Volatile Resistive Switching in VO2

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Faster Diffusion of Oxygen Along Dislocations in (La,Sr)MnO_3+δ Is a Space‐Charge Phenomenon

Faster Diffusion of Oxygen Along Dislocations in (La,Sr)MnO_3+δ Is a Space‐Charge Phenomenon

Nanoscale Imaging and Control of Volatile and Non‐Volatile Resistive Switching in VO₂