Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars

Xia, Ruidong; Larkins, E.C.; Harrison, I.; Dods, S.R.A.; Andrianov, A. V.; Morgan, J.; Landesman, Jean-Pierre

doi:10.1109/lpt.2002.1012376

Cited by 37 publications

(24 citation statements)

References 13 publications

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“…This paper gives a further credence to the by-emitter degradation analysis technique developed over recent years Xia et al [5], [6][7][8] and Bream et al [9]. This tool is also an addition to the by-emitter analysis technique where the effects of certain factors that affect the degradation of laser emitters/bars can be investigated.…”

Section: Introductionmentioning

confidence: 67%

By-Emitter Emulation of the Degradation of a Calibrated 975 nm Tapered Laser Bar Using a Laser Diode Simulation/Emulation Tool

Amuzuvi¹,

Ofori²

2013

JEEE

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Abstract:In this paper, Barlase has been taken a step further by emulating the degradation processes in high power semiconductor laser bars to further deepen the understanding of the behaviour of laser bars. In publications elsewhere where Barlase was used, investigations were done using hypothetical laser bars to emulate various degradation processes commonly found in the operations of lasers. In this paper however, the emulation of a real laser bar is being investigated to compare experimental results to the emulated results to establish a correlation between them. The results established show a close matching between the experimental and the emulated results but the levels of change were not similar. The reason for this can be attributed to the thermal properties used in Barlase and that the consideration of a global thermal solver will be necessary to improve upon the mismatch between the experimental and emulated results.

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Section: Introductionmentioning

confidence: 67%

By-Emitter Emulation of the Degradation of a Calibrated 975 nm Tapered Laser Bar Using a Laser Diode Simulation/Emulation Tool

Amuzuvi¹,

Ofori²

2013

JEEE

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“…Indeed, the existence of a strain threshold for defect creation has been observed [21]. There is also a second, lower packaging-induced strain threshold, above which a significant increase in the degradation rate is observed during operation [22].…”

mentioning

confidence: 91%

“…A more-detailed description of this multifunction instrument can be found elsewhere [22], [24], [28], [31]. The new spectroscopically resolved techniques bring together PLM imaging and PL spectroscopy, resulting in, for the first time, a high-quality imaging technique that is quantitatively calibrated and both spectrally and spatially resolved.…”

mentioning

confidence: 99%

A Spectroscopically Resolved Photo- and Electroluminescence Microscopy Technique for the Study of High-Power and High-Brightness Laser Diodes

Bull

Andrianov

Harrison

et al. 2005

IEEE Trans. Instrum. Meas.

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Abstract-A novel and advanced characterization technique is described for performing optical studies of the luminescence properties of materials. It was developed for the investigation of semiconductor materials, including semiconductor laser diodes and photonic integrated circuits. A quantitatively calibrated, spatially and spectrally resolved imaging technique is described, which is based upon the technologies of photoluminescence microscopy and photoluminescence spectroscopy. The principles of the spectroscopically resolved photo-and electroluminescence microscopy techniques are outlined in this paper, and the developed instrument is described in detail. Design calculations used to select and set up the experimental apparatus are presented, and results are found to compare well with this analysis. Various experimental measurements are used to demonstrate the performance of the new instrument. The study of strain and defects in high-power laser diodes is presented as one of the more challenging applications of the new technique. The results presented demonstrate the ability of this technique to image photoluminescence shifts occurring in the substrate of packaged laser bars, enabling the investigation of strain, defects and their evolution with aging. Other applications of the technique include the spectroscopic measurement of near-and far-field patterns and virtual sources of laser diodes, investigations of spectral hole burning and optical scattering processes in lasers and photonic integrated circuits, and studies of organic LEDs. In the future, applications are also envisaged in medicine and the biological sciences.Index Terms-Electroluminescence microscopy, high-brightness laser diodes, high-power laser diodes, photoluminescence microscopy, quantitative imaging, spectroscopic imaging.

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“…Menzel et al [3] investigated the effect of temperature on facet degradation, where reductions in the performance and lifetime were found to be as a result of nonradiative surface recombination. Xia et al [4], Tomm et al [5], and Bull et al [6] all used a detailed "by-emitter" performance analysis of each emitter to understand the behaviour and degradation of the individual emitters. When emitter temperatures rise, thermal crosstalk between emitters becomes more significant [7].…”

Section: Introductionmentioning

confidence: 99%

Further Investigations into the Effects of Temperature on a 975 nm Tapered Laser Bar Using Convolution to Ascertain the Dominant Effect of Temperature on a Laser Bar

Amuzuvi¹,

Asante²

2014

AJEEE

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Temperature continues to be an issue in the reliability of high power laser diodes. Any effort, therefore, made to understand the dynamics of temperature on the performance of laser diodes is important. This is because it serves as a catalyst for the generation of nonradiative recombination centers, which ultimately kills laser diodes. In this paper, the convolution of simulation results was done to compare it with experimental results, which revealed more details that hitherto, could not have been captured by experiments alone. The inability of experiments to capture these details is due to the limited spatial resolution of the charged-coupled device (CCD) camera, which is approximately 30 µm much larger than the thickness of the quantum well active region used in the experiment. The convolution results showed a further smile-shaped profile within the four groups of array emitters, which in the experimental results, were considered as one emitter due to the limited spatial resolution of the CCD camera. The use of convolution to determine more details was investigated, due to the dominant effect of temperature found across the output power distribution of high power semiconductor laser diode bars.Keywords: by-emitter, emitter, quantum well, defect, non-radiative recombination, degradation, temperature, thermal crosstalk, spatial resolution, convolution, interpolation, charged-coupled

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Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars

Cited by 37 publications

References 13 publications

By-Emitter Emulation of the Degradation of a Calibrated 975 nm Tapered Laser Bar Using a Laser Diode Simulation/Emulation Tool

By-Emitter Emulation of the Degradation of a Calibrated 975 nm Tapered Laser Bar Using a Laser Diode Simulation/Emulation Tool

A Spectroscopically Resolved Photo- and Electroluminescence Microscopy Technique for the Study of High-Power and High-Brightness Laser Diodes

Further Investigations into the Effects of Temperature on a 975 nm Tapered Laser Bar Using Convolution to Ascertain the Dominant Effect of Temperature on a Laser Bar

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