Movement of basal plane dislocations in GaN during electron beam irradiation

Yakimov, E. B.; Вергелес, П. С.; Polyakov, A. Y.; Lee, In Hwan; Pearton, S. J.

doi:10.1063/1.4916632

Cited by 27 publications

(25 citation statements)

References 30 publications

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“…This difference was similar for films with different average donor concentration, which allowed for a possible explanation of the effect. 157 Similar investigations of neutron irradiated films showed that this method can reveal inhomogeneous radiation defect accumulation.…”

Section: Movement Of Dislocations In Gan During Electron Beam Irradiamentioning

confidence: 82%

“…Yakimov et al 157 demonstrated dislocation movement upon irradiation by the probing electron beam of a scanning electron microscope. The effect was registered only for the segments of dislocations lying in the basal plane.…”

Section: Movement Of Dislocations In Gan During Electron Beam Irradiamentioning

confidence: 99%

“…Only a small fraction of the basal plane dislocations were susceptible to such changes and the movement was limited to relatively short distances. 157 The effect is explained by the REDG for dislocations pinned by two different types of pinning sites, a low-activation-energy site and a high-activation-energy site. Only dislocation segments pinned by the former sites can be moved by irradiation and only until they meet the latter pinning sites.…”

Section: Movement Of Dislocations In Gan During Electron Beam Irradiamentioning

confidence: 99%

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Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

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282

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Section: Movement Of Dislocations In Gan During Electron Beam Irradiamentioning

confidence: 82%

Section: Movement Of Dislocations In Gan During Electron Beam Irradiamentioning

confidence: 99%

Section: Movement Of Dislocations In Gan During Electron Beam Irradiamentioning

confidence: 99%

See 1 more Smart Citation

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

Self Cite

282

130

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“…Radiation damage in wide bandgap semiconductors is attracting increasing interest, especially in GaN. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] Recently, it has become clear that β-Ga 2 O 3 is attractive for high temperature applications in harsh environments that cannot be tolerated by conventional electronics. [17][18][19][20][21][22][23][24][25][26][27][28][29] Its wide bandgap allows operation at elevated temperatures, while it is also radiation hard and may provide improved performance over GaN.…”

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confidence: 99%

Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga₂O₃

Xia

Sharma

et al. 2022

ECS J. Solid State Sci. Technol.

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Ga2O3 is expected to show similar radiation resistance to that of GaN and SiC. This is not enough to explain the orders of magnitude difference in the relative resistance to radiation damage of these materials compared to GaAs or why dynamic annealing of defects is much more effective in Ga2O3. Octahedral gallium monovacancies are the main defects produced under most radiation conditions because of the larger cross-section for interaction compared to oxygen vacancies. Proton irradiation introduces two main paramagnetic defects in Ga2O3, which are stable at room temperature. Charge carrier removal can be explained by Fermi-level pinning far from the conduction band minimum due to gallium interstitials, vacancies, and antisites. With few experimental or simulation studies on single event effects in Ga2O3 , it is apparent that while other wide bandgap semiconductors like SiC and GaN are robust against displacement damage and total ionizing dose, they display significant vulnerability to single event effects at high linear energy transfer and at much lower biases than expected. We have analyzed the transient response of β-Ga2O3 rectifiers to heavy-ion strikes via TCAD simulations. Using field metal rings improves the breakdown voltage and biasing those rings can help control the breakdown voltage.

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“…. The underlying mechanism of such relaxation might be the irradiation‐enhanced point or extended defects redistribution, especially taking into account that the recombination‐enhanced dislocation glide in GaN has been already observed under e‐beam irradiation. A study of CL spectrum dependence on applied bias before and after LEEBI allowed to assume that a dissociation of Mg–H complexes in the upper p‐GaN layer and subsequent hydrogen diffusion into active layer can also be involved in the modification of InGaN MQW optical properties .…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Low‐Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures

Yakimov

Polyakov

Вергелес

2018

Physica Status Solidi (b)

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The low‐energy electron beam irradiation (LEEBI) effect at 80 K on the optical properties of InGaN/GaN multiple quantum well structures has been studied. It is shown that the new emission band formed under LEEBI is related to quantum wells. At 80 K the total intensity of new and initial emission bands does not change under LEEBI. The intensity of the 3.3 eV line is shown to increase due to LEEBI. The results obtained are explained assuming a modification of properties of small local regions, which strongly localize the excess carriers.

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Movement of basal plane dislocations in GaN during electron beam irradiation

Cited by 27 publications

References 30 publications

Review—Ionizing Radiation Damage Effects on GaN Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga₂O₃

Temperature Dependence of Low‐Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures

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Movement of basal plane dislocations in GaN during electron beam irradiation

Cited by 27 publications

References 30 publications

Review—Ionizing Radiation Damage Effects on GaN Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga2O3

Temperature Dependence of Low‐Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures

Contact Info

Product

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Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga₂O₃