MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode

Abstract

This paper reports the metalorganic vapor phase epitaxy (MOVPE) of InN on GaN/sapphire templates by pulsed growth mode. Photoluminescence analysis of the films has been performed both at room temperature (T = 300 K) and low temperature (T = 77 K). At room temperature, the band gap of InN is measured as 0.77 eV which is observed to have strong dependence on the growth temperature of the film. The appearance of otherwise less dominant transitions is associated to defects related luminescence from the films grown at relatively low growth temperatures. The electron mobility of 681 cm2/(V s) is obtained for InN alloy grown under optimal condition. The X‐ray diffraction (XRD) analysis, structural quality and the evolution of the surface morphology of thin InN films have also been studied in the context of the given growth conditions. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Novel device concepts for high-efficiency InGaN-based light-emitting diodes

“…The use of colloidal-based microlens approach leads to the light extraction enhancement by 2.5-times and 1.77 times for convex-and concave-microlens arrays, respectively. In addition to the use of InGaN alloy as active region in visible spectrum, the use of novel InN semiconductor may potentially be employed as part of the active region in particular for longer wavelength spectrum [15][16][17][18].…”

Characteristics of narrow-bandgap InN semiconductors grown on Ga-polar and N-polar GaN templates by pulsed metalorganic vapor phase epitaxy

“…The pulsed MOVPE process of InN growths were conducted by controlling the pulsing of the In precursor in the chamber, while maintaining a constant flow of NH 3 as shown in figure 1 [20,21]. All the pulsed growths of InN layers were conducted at a growth pressure of 200 Torr.…”

Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes

“…, power electronics [15], thermoelectricity [16][17][18], and solar cells [19][20][21][22][23]. High-efficiency InGaN quantum wells (QWs) light-emitting diodes (LEDs) play an important role in solid state lighting [1][2][3][4][5][6][7][8][9][10][11][12][13][14].…”