MOVPE growth and transport characterization of Bi2−Sb Te3−Se films

Epitaxial Growth of the BiySb2–yTe3–xSex 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy

“…Their appearance is usually associated with the lack of chalcogens on the substrate. The orthorhombic phases are formed or bismuth is aggregated in this condition. This problem is solved by increasing the flux of chalcogene-containing components or changing the source composition …”

“…Tu et al 15 obtained a good surface quality of BSTS films grown on a mica substrate by PVD, but the growth mechanism was found to be critically dependent on an inner tube diameter. In the paper 16 to reduce the mismatch between the film and the substrate, the 300 nm-thick BSTS films were grown by metalorganic vapor-phase epitaxy on sapphire through ZnTe buffer layers; however, they did not observe smooth surface relief. In spite of the fact that MBE allows one to vary the stoichiometry of compounds and precisely control layer thickness, the formation of BSTS films using MBE was also described only in several groups.…”

“…Tu et al obtained a good surface quality of BSTS films grown on a mica substrate by PVD, but the growth mechanism was found to be critically dependent on an inner tube diameter. In the paper to reduce the mismatch between the film and the substrate, the 300 nm-thick BSTS films were grown by metalorganic vapor-phase epitaxy on sapphire through ZnTe buffer layers; however, they did not observe smooth surface relief. In spite of the fact that MBE allows one to vary the stoichiometry of compounds and precisely control layer thickness, the formation of BSTS films using MBE was also described only in several groups. , Expanding the number of compound components greatly complicates the growth procedure: it increases the degree of atomic disorder naturally occurring in these systems and reduces the number of suitable substrates since a large lattice constant mismatch stimulates the formation of crystal defects.…”

Fabrication and Applications of Heterostructure Materials for Broadband Ultrafast Photonics

“…After 30 s of interruption, other reactants were injected into the chamber for the deposition of Bi 2 Te 3 films. [ 94 ] In general, CVD has been regarded as a low‐cost method. [ 95 ] Since the high temperature may limit its usage, some effective CVD methods have been explored for preparing materials like graphene at a low temperature and cost.…”

Выявление поверхностных состояний в топологических изоляторах Bi-=SUB=-2-x-=/SUB=-Sb-=SUB=-x-=/SUB=-Te-=SUB=-3-y-=/SUB=-Se-=SUB=-y-=/SUB=- по магнитотранспортным измерениям

“…Нами исследовалось шесть образцов различного состава, полученных в работе [5]: образец Ax = 0.35, y = 0.85, образец Bx = 0.6, y = 1.32, образец Cx = 0.67, y = 1.32, образец Dx = 1.15, y = 1.5, образец Ex = 0.6, y = 2.10 и Fx = 0.39, y = 1.97. Для оценки вклада поверхностных топологических состояний в проводимость при комнатной температуре всего образца будем считать, что проводимость топологических состояний не меняется с температурой и равна проводимости образца при низких температурах.…”