MOVPE growth experiments of the novel (GaIn)(NP)/GaP material system

Kunert, Bernardette; Koch, J.; Torunski, T.; Volz, Kerstin; Stolz, W.

doi:10.1016/j.jcrysgro.2004.08.091

Cited by 14 publications

(23 citation statements)

References 10 publications

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“…Nitrogen thus seems not to desorb remarkably from the bulk of the GaPN film, which is in line with Ref. 45 where sticking limited N incorporation is found for GaPN.…”

supporting

confidence: 91%

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Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)

Supplie¹,

May²,

Stange³

et al. 2014

Journal of Applied Physics

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Articles you may be interested inLinear thermal expansion coefficient determination using in situ curvature and temperature dependent X-ray diffraction measurements applied to metalorganic vapor phase epitaxy-grown AlGaAs J. Appl. Phys. 114, 033501 (2013); 10.1063/1.4812369In situ control of As dimer orientation on Ge (100) Energy storage is a key challenge in solar-driven renewable energy conversion. We promote a photochemical diode based on dilute nitride GaPN grown lattice-matched on Si(100), which could reach both high photovoltaic efficiencies and evolve hydrogen directly without external bias. Homoepitaxial GaP(100) surface preparation was shown to have a significant impact on the semiconductor-water interface formation. Here, we grow a thin, pseudomorphic GaP nucleation buffer on almost single-domain Si(100) prior to GaPN growth and compare the GaP 0.98 N 0.02 /Si(100) surface preparation to established P-and Ga-rich surfaces of GaP/Si(100). We apply reflection anisotropy spectroscopy to study the surface preparation of GaP 0.98 N 0.02 in situ in vapor phase epitaxy ambient and benchmark the signals to low energy electron diffraction, photoelectron spectroscopy, and x-ray diffraction. While the preparation of the Ga-rich surface is hardly influenced by the presence of the nitrogen precursor 1,1-dimethylhydrazine (UDMH), we find that stabilization with UDMH after growth hinders well-defined formation of the V-rich GaP 0.98 N 0.02 /Si(100) surface. Additional features in the reflection anisotropy spectra are suggested to be related to nitrogen incorporation in the GaP bulk. V C 2014 AIP Publishing LLC.

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“…Nitrogen thus seems not to desorb remarkably from the bulk of the GaPN film, which is in line with Ref. 45 where sticking limited N incorporation is found for GaPN.…”

supporting

confidence: 91%

“…Nitrogen is incorporated inefficiently into GaP 45 so that UDMH:TPB ratios in the order of 1 are necessary to incorporate few percents of nitrogen. Fig.…”

Section: B Group-v-rich Surfacementioning

confidence: 99%

Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)

Supplie¹,

May²,

Stange³

et al. 2014

Journal of Applied Physics

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“…Dilute nitrides such as GaPN [4], InGaPN [5] and GaAsPN [6] have been expected as materials for light emitting device on Si, since these materials can be lattice-matched to Si and have a quasi direct band gap. Recently, strained GaNAs(P) quantum wells [7][8][9] and self assembled GaInNAs quantum dots [10] with (B)GaP(N) barriers have been intensively studied for laser operation on Si.…”

Section: Introductionmentioning

confidence: 99%

Growth of AlPN by solid source molecular beam epitaxy

Kawai

Yamane

Furukawa

et al. 2010

Phys. Status Solidi (c)

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We reported the growth of AlPN by solid source molecular beam epitaxy (MBE). N content in AlPN showed less temperature dependence than GaPN. The surface morphology degraded at lower growth temperatures even though the N contents were almost the same. A cross‐sectional transmission electron microscopy (X‐TEM) image revealed that the surface roughening leads to stacking faults. In the case of films grown above 600 °C, atomically smooth surface was obtained. A dislocation‐free AlPN layer with abrupt GaP/AlPN heterointerface was obtained (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Then we will verify the first realisation of an electrical injection laser in this novel material system at low temperatures and discuss possible ways to improve the layer structure in order to realise room temperature electrical injection laser operation. The optimisation of the epitaxial growth conditions have been performed on 5-period Ga(NAsP)/GaP-MQWH [5]. After optimisation of the MOVPE growth conditions layer stacks with high structural perfection can be deposited for the novel metastable Ga(NAsP)/GaP-material system.…”

Section: Resultsmentioning

confidence: 99%

“…Due to the metastable character of the Ga(NAsP) specific low temperature MOVPE growth conditions at 575°C using the more efficiently decomposing group-V-sources tertiarybutyl arsine (TBAs), tertiarybutyl phosphine (TBP) and 1,1-dimethyl hydrazine (UDMHy) in combination with the group-III-sources triethyl gallium (TEGa) and trimethyl indium (TMIn) have been applied. Details of the epitaxial growth conditions will be published elsewhere [5]. The structural investigations have been performed by means of XRD (`X`Pert Pro MRD diffractometer from Panalytical) and TEM (Jeol 3010 microscope).…”

Section: Methodsmentioning

confidence: 99%

First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP‐material system

Kunert

Reinhard

Koch

et al. 2006

Phys. Status Solidi (c)

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Quantum well heterostructures (QWH) in the novel dilute nitride Ga(NAsP)/GaP-material system have been grown pseudomorphically strained to GaP-substrate by metal organic vapour phase epitaxy (MOVPE). The high crystalline perfection has been determined by detailed structural analysis applying high-resolution X-ray diffrcation (XRD). The active QWH have been embedded in (AlGa)P/GaPwaveguide structures. Electrical injection lasing has been verified for broad area laser devices at low temperatures (80K -150K) for the first time in this novel material system.

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MOVPE growth experiments of the novel (GaIn)(NP)/GaP material system

Cited by 14 publications

References 10 publications

Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)

Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)

Growth of AlPN by solid source molecular beam epitaxy

First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP‐material system

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