MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors

Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications

“…The relative rates of these bi-and uni-molecular reactions and their temperature and pressure dependences are not known, making the exact determination of the changes in incorporation difficult. Similar trends relating N incorporation with reactor pressure were observed for GaAsN using DMHy as the N source [26]. In an attempt to incorporate higher N concentration in the film, the DMHy/TBAs ratio was varied within the range 14-22 (Fig.…”

“…A comparison of the carbon concentration and mobility for nominally lattice-matched GaInAsN material with available literature reports is summarized in Table 1 [13,14,[22][23][24][25][26]. It has been difficult to obtain a carbon background concentration below 10 16 cm À 3 [14] in MOVPE-grown dilute-nitride material.…”

“…No N was detected by SIMS once TESb was introduced into the growth of GaInNAsSb and the incorporation of In into the film increased by a factor of 2 over the In content in the super-lattice calibration samples. High In content has been observed to inhibit N incorporation due to desorption of the N species at the surface [26]. In forming these alloys, both the changes in the N and In incorporation rates with Sb complicate the determination of appropriate growth conditions and adds to the sensitivity of the specific process conditions.…”

“…3a. Previous studies indicate that N incorporation into GaAsN material is strongly dependent on reactor pressure [26]. Enhanced decomposition of the DMHy precursor due to lower gas velocity and higher pressure is thought to attribute to a higher residence time at elevated temperature near the growth front, resulting in higher levels of DMHy decomposition near the growth surface [26].…”

Hopping relaxation of photo‐excited excitons in Ga(NAsP) bulk structure

“…The V/III rate during the growth process was 20. The temperature calibration which is of most importance when growing dilute N-containing materials [12] was carried out using Al/Si wafers, where one can monitor the Al-Si eutectic formation at 577 °C as a calibration of the surface temperature. After the growth a thermal annealing was applied.…”