MOVPE growth of HgCdTe for high performance 3–5 µm photodiodes operating at 100–180K

Planar p-on-n HgCdTe heterojunction mid-wavelength infrared photodiodes formed using plasma-induced junction isolation

“…A number of heterojunction photodiode designs have been proposed, [1][2][3][4] ranging from devices based on starting layers of either N-on-n heterostructures or P-on-n grown heterojunctions. Concurrent with the development of material technology have been advances in the performance of heterostructurebased HgCdTe IR photodetectors and, specifically, photodiodes.…”

“…Concurrent with the development of material technology have been advances in the performance of heterostructurebased HgCdTe IR photodetectors and, specifically, photodiodes. In contrast, the P-on-n grown junctions are isolated by either mesa etching regions between active photodiodes 2,4 or by type conversion of the wider bandgap P-type layer to N-type via ion milling. For devices fabricated from N-on-n layers, the P-on-n junction is formed by ion implantation of regions to convert to p-type.…”