MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance

Wang, Christine A.; Schwarz, Benedikt; Siriani, Dominic F.; Missaggia, L.J.; Connors, M.K.; Mansuripur, Tobias S.; Calawa, D.R.; McNulty, Daniel; Nickerson, Michael; Donnelly, J.P.; Creedon, Kevin; Capasso, Federico

doi:10.1109/jstqe.2017.2677899

Cited by 35 publications

(23 citation statements)

References 76 publications

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“…It is explained by a small smearing of interfaces in the nanoheterostructure, which agrees with data from [11], where roughness of interfaces of QCL grown by the MOVPE method was studied by transmission electron microscopy. Such shift effect to the long-wavelength side was also observed in [12], where QCL was also created by the MOVPE method and the corresponding long-wavelength shift reached even 0.5-1 µm.…”

Section: Measurement Results and Discussionsupporting

confidence: 58%

GaInAs/AlInAs Heteropair Quantum Cascade Laser Operating at a Wavelength of 5.6 μm and Temperature of Above 300K

Zasavitskiǐ¹,

Kovbasa²,

Распопов³

et al. 2018

KEG

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A quantum cascade laser based on a strain-compensated Ga 0.4 In 0.6 As/Al 0.58 In 0.42 As heteropair is developed, which operates in a pulse mode in the wavelength range of 5.5-5.6 µm at a temperature of up to 350 K. Such characteristics are obtained due to increased quantum well depth and a two-phonon depopulation mechanism for the lower laser level. The laser epitaxial heterostructure was grown by the MOVPE method. Investigation by the high-resolution X-ray diffraction technique confirmed a high quality of the heterostructure. The threshold current density is 1.6 kA/cm 2 at 300 К. The characteristic temperature is T 0 = 161 K for the temperature range of 200-350 K. For a laser of size 20 µm × 3 mm with cleaved mirrors, the maximum pulse power is 1.1 W at 80 K and 130 mW at 300 K.Keywords: quantum cascade laser, GaInAs/AlInAs heteropair, MOVPE, the middle IR spectrum IntroductionQuantum cascade laser (QCL) is a unipolar radiation source based on intersubband transitions of charge carriers in a semiconductor nanoheterostructure [1,2]. The radiation wavelength of QCL is determined by both quantum well size and the heteropair employed, which determines the band offset that is the quantum well depth. Presently, by varying these two parameters and the material composition, QCLs are created, which cover a wide spectral range of 3-250 µm. For operation in the actual middle IR spectral range of 4-6 µm, a strain-compensated GaInAs/AlInAs heteropair is used and the multilayer nanoheterostructure is grown, as a rule, by the molecular beam epitaxy method. The MOVPE (metal organic vapor phase epitaxy) epitaxial method suggested How to cite this article: I. I

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Section: Measurement Results and Discussionsupporting

confidence: 58%

GaInAs/AlInAs Heteropair Quantum Cascade Laser Operating at a Wavelength of 5.6 μm and Temperature of Above 300K

Zasavitskiǐ¹,

Kovbasa²,

Распопов³

et al. 2018

KEG

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“…The QCL has a layer structure consisting of GaInAs/AlInAs lattice matched to InP; it emits at 9.0 µm and is described in more detail in ref. 39. The 12-µm-wide QCL waveguide was fabricated by reactive ion etching followed by SiN passivation using plasma-enhanced chemical vapor deposition, sputtered Ti/Au contact deposition using a lift off, substrate thinning to 150 µm, bottom-side Ti/Au contact deposition, and cleaving to a 8-mm-long device.…”

Section: Methodsmentioning

confidence: 99%

Radio frequency transmitter based on a laser frequency comb

Piccardo

Tamagnone

Schwarz

et al. 2019

Proc. Natl. Acad. Sci. U.S.A.

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Since the days of Hertz, radio transmitters have evolved from rudimentary circuits emitting around 50 MHz to modern ubiquitous Wi-Fi devices operating at gigahertz radio bands. As wireless data traffic continues to increase, there is a need for new communication technologies capable of high-frequency operation for high-speed data transfer. Here, we give a proof of concept of a compact radio frequency transmitter based on a semiconductor laser frequency comb. In this laser, the beating among the coherent modes oscillating inside the cavity generates a radio frequency current, which couples to the electrodes of the device. We show that redesigning the top contact of the laser allows one to exploit the internal oscillatory current to drive a dipole antenna, which radiates into free space. In addition, direct modulation of the laser current permits encoding a signal in the radiated radio frequency carrier. Working in the opposite direction, the antenna can receive an external radio frequency signal, couple it to the active region, and injection lock the laser. These results pave the way for applications and functionality in optical frequency combs, such as wireless radio communication and wireless synchronization to a reference source.

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“…К настоящему моменту ККЛ с длиной волны излучения ∼ 9 µm, выращенные на подложках InP, используют конструкции активных областей на основе: трех квантовых ям [4], двух- [5][6][7][8][9] и трехфононного резонансного рассеяния электронов [10], переходов " связанное состояние-непрерывный спектр" [2,11], набора кванто-вых ям, а также набора барьеров с различным составом по индию [12,13], безинжекторной конструкции с двухфононным резонансным рассеянием электронов [14], с непрямой схемой накачки [15], с двумя верхними уровнями [16], на основе переходов " непрерывный спектрсвязанное состояние" [17], с нерезонансным выбросом носителей заряда [18,19], с выбросом электронов за счет однофононного опустошения нижнего уровня в континуум [20,21].…”

Section: Introductionunclassified

“…Однако наивысшую выходную оптическую мощность при работе в непрерывном режиме (2 W) и коэффициент полезного действия (КПД) порядка 10% на длине волны излучения ∼ 9 µm демонстрируют ККЛ, выращенные МПЭ [18]. При этом максимальная выходная оптическая мощность и КПД ККЛ, выращенных МОГФЭ, составляют 1.4 W и 6.8% соответственно [21,22].…”

Section: Introductionunclassified