MOVPE-like HVPE of AlN using solid aluminum trichloride source

High-temperature growth of thick AlN layers on sapphire (0 0 0 1) substrates by solid source halide vapor-phase epitaxy

“…The solid source HVPE used in this study consisted of a horizontal quartz reactor with optical local heating [12]. AlN growth was carried out under atmospheric pressure using N 2 or mixture of N 2 +H 2 .…”

Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process

“…As expected, AlN crystalline quality strongly increases while increasing deposition temperature even if the value is still poor compared to the AlN template substrate. The obtained quality could be explained by the roughness of the starting surface induced by the AlN template surface decomposition [30], the presence of impurities as O or C [15,25] and/or the absence of AlN buffer/nucleation layer [43] or protective layer [25] prior to high temperature growth.…”

The fabrication of AlN by hydride vapor phase epitaxy

“…Using of the HT-HVPE system, AlN films with high crystalline quality have been obtained. Besides, the growth rate is The surface morphology of AlN grown at initial stage [45] . (c) 1200 nm grown on sapphire substrates [44] .…”

“…Fig. 7 shows the atomic force microscopy (AFM) images of the surface morphology of the initial growth stage of AlN grown by HVPE [45] . When the growth time was 10 min (the thickness around 50 nm), the surface was dominated by hexagonal-prism-shaped islands.…”