MOVPE of GaN on sapphire using the alternate precursor 1,1-dimethylhydrazine

Bourret-Courchesne, Edith; Yu, K. M.; Irvine, S.J.C.; Stafford, Anne; Rushworth, S.; Smith, Lynn; Kanjolia, Ravi

doi:10.1016/s0022-0248(00)00693-x

Cited by 6 publications

(1 citation statement)

References 21 publications

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“…However, there is demand for alternative and more reactive group V precursors because considerable amount of ammonia has to be supplied to compensate for its very low decomposition efficiency. One of the most promising candidates is 1,1dimethylhydrazine [1,1-DMHy, (CH 3 ) 2 N 2 H 2 ], [2][3][4][5][6][7][8] because DMHy decomposes at a temperature as low as 420 C. 4) In fact, the molar flow ratio of a nitrogen source against a group III precursor (V/III ratio) during GaN MOVPE can be less than 100 for DMHy, while it is typically more than 1000 for ammonia. Furthermore, the higher reactivity of DMHy may lower growth temperatures, which should be an additional advantage for the growth of InGaN and AlGaN.…”

Section: Introductionmentioning

confidence: 99%

Metalorganic Vapor Phase Epitaxy of GaN, InN, and AlGaN Using 1,1-Dimethylhydrazine as a Nitrogen Source

Funato

Ujita

Kawakami

2007

jjap

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GaN, InN, and AlGaN were grown by metalorganic vapor phase epitaxy (MOVPE) using 1,1-dimethylhydrazine (DMHy) as a nitrogen source instead of ammonia. GaN with atomically flat surfaces and dislocation densities comparable to those in GaN grown with ammonia was obtained under a growth temperature of 925 C and a V/III ratio of 25, which are much lower than those in ammonia-MOVPE. Carbon incorporation from the source precursors is avoidable in hydrogen growth ambients but is considerable in inert ambients. For InN, the (inert) N 2 ambient also results in carbon-related deposits, while the H 2 ambient enables InN to be grown but causes In segregation. For AlGaN, the entire Al solid composition can be attained by growth under atmospheric pressure at 925 C. Although the edge dislocation density increases with increasing Al composition, the screw dislocation density is as low as a value on the order of 10 6 cm À2 . These findings strongly suggest that 1,1-DMHy is a promising alternative to ammonia for the growth of GaN and AlGaN but is rather unsuitable for the growth of In-containing alloys.

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Section: Introductionmentioning

confidence: 99%

Metalorganic Vapor Phase Epitaxy of GaN, InN, and AlGaN Using 1,1-Dimethylhydrazine as a Nitrogen Source

Funato

Ujita

Kawakami

2007

jjap

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Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer

Bourret-Courchesne

Benamara

et al. 2001

Journal of Elec Materi

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Abstract:A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the initial growth at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are identical to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.

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Coordination Complexes as Precursors for Semiconductor Films and Nanoparticles

O’Brien

Pickett

2003

Comprehensive Coordination Chemistry II

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MOVPE of GaN on sapphire using the alternate precursor 1,1-dimethylhydrazine

Cited by 6 publications

References 21 publications

Metalorganic Vapor Phase Epitaxy of GaN, InN, and AlGaN Using 1,1-Dimethylhydrazine as a Nitrogen Source

Metalorganic Vapor Phase Epitaxy of GaN, InN, and AlGaN Using 1,1-Dimethylhydrazine as a Nitrogen Source

Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer

Coordination Complexes as Precursors for Semiconductor Films and Nanoparticles

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