2005
DOI: 10.1109/tmag.2005.854825
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MR effects in half-metallic CrO/sub 2//MoO/sub 2/ mixtures

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“…Since the perfect spin polarization should result in large MRR, CrO 2 can be a candidate material for the development of spintronics devices such as spin valves and magnetic random access memories (MRAMs). CrO 2 -based tunneling magneto-resistance (TMR) junctions have been studied by several kinds of barriers, such as TiO 2 [13], RuO 2 [13][14][15], SnO 2 [16], Cr 2 O 3 [17], Cr 2 O 5 [18], Fe 3 O 4 [19] and MoO 2 [20]. At 77 K and 1 T, the maximal magneto-resistance ratios (MRR's) were observed as 5~10% for most of the above systems.…”
Section: Introductionmentioning
confidence: 99%
“…Since the perfect spin polarization should result in large MRR, CrO 2 can be a candidate material for the development of spintronics devices such as spin valves and magnetic random access memories (MRAMs). CrO 2 -based tunneling magneto-resistance (TMR) junctions have been studied by several kinds of barriers, such as TiO 2 [13], RuO 2 [13][14][15], SnO 2 [16], Cr 2 O 3 [17], Cr 2 O 5 [18], Fe 3 O 4 [19] and MoO 2 [20]. At 77 K and 1 T, the maximal magneto-resistance ratios (MRR's) were observed as 5~10% for most of the above systems.…”
Section: Introductionmentioning
confidence: 99%