MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections

Medina-Bailón, Cristina; Sampedro, Carlos; Padilla, José‐Luis; Godoy, A.; Donetti, L.; Gamiz, F.; Asenov, A.

doi:10.1109/ulis.2018.8354758

Cited by 11 publications

(11 citation statements)

References 14 publications

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“…With the implementation of S/D tunneling depicted in Figure 2 and the computation of the current using the conventional method of counting the number of particles moving inside a previously fixed space window, the simulation results obtained showed that the current contribution of this quantum phenomenon proved to be higher compared to the levels reported by a NEGF approach [ 14 ]. This discrepancy turned out to be particularly noticeable as gate lengths decreased in the analyzed devices.…”

Section: Simulation Framework and Device Structuresmentioning

confidence: 99%

Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator

et al. 2021

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The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC has traditionally led to overestimated current levels in the subthreshold regime. In order to correct this issue and enhance the capabilities of this type of simulator, we discuss in this paper two alternative and self-consistent solutions focusing on different parts of the simulation flow. The first solution reformulates the tunneling probability computation by modulating the WKB approximation in a suitable way. The second corresponds to a change in the current calculation technique based on the utilization of the Landauer formalism. The results from both solutions are compared and contrasted to NEGF results from NESS. We conclude that the current computation modification constitutes the most suitable and advisable strategy to improve the MS-EMC tool.

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Section: Simulation Framework and Device Structuresmentioning

confidence: 99%

Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator

et al. 2021

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“…Eventually, the tunneling path is established considering that electrons fly through the potential barrier during a certain period of time, following a ballistic flight inside it, evaluated according to Newton's mechanics in an inverted potential profile. The choice of this tunneling path has already shown its accuracy when compared with a ballistic transport description making use of the nonequilibrium Green's function (NEGF) formalism, especially for the degradation in the subthreshold region [14].…”

Section: B Description Of the Modelmentioning

confidence: 99%

Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices

Medina-Bailón

Padilla

Sadi

et al. 2019

IEEE Trans. Electron Devices

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Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, and therefore, advanced device simulators need to include them in an appropriate way. This paper presents the modeling and implementation of direct source-to-drain tunneling (S/D tunneling), gate leakage mechanisms (GLM) accounting for both direct and trap assisted tunneling, and nonlocal band-to-band tunneling (BTBT) phenomena in a multi-subband ensemble Monte Carlo (MS-EMC) simulator along with their simultaneous application for the study of ultrascaled fully depleted silicon on insulator, double-gate silicon on insulator, and FinFET devices. We find that S/D tunneling is the prevalent phenomena for the three devices, and it is increasingly relevant for short channel lengths. Index Terms-Band-to-band tunneling (BTBT), direct sourceto-drain tunneling (S/D tunneling), double-gate silicon on insulator (DGSOI), FinFET, fully depleted silicon on insulator (FDSOI), gate leakage current, Multi-Subband Ensemble Monte Carlo (MS-EMC) I. INTRODUCTION T HE aggressive reduction of device dimensions has increased the importance of short-channel effects (SCEs) and leakage mechanisms as relevant agents degrading the device performance and leading, for example, to the loss of gate control over the channel and the increase of the drain influence. The variation of the threshold voltage (V th) as the channel length decreases is one of the main effects that needs study, without losing sight of the fact that SCEs do not only affect V th but also the subthreshold characteristics contributing to off-state current degradation. The inclusion of additional physical phenomena is thus required in the modeling of new technological nodes, in order

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“…The last step in this model is to describe the tunneling path. A realistic process, in which the particles fly through the potential barrier during a certain period of time, has been considered because it has demonstrated a good description of the degradation in the subthreshold region similar to Non-Equilibrium Green's Function (NEGF) calculations [15]. The tunneling particle's motion inside the barrier obeys Newton's mechanics considering an inverted potential profile and ballistic transport.…”

Section: B Description Of the S/d Tunneling Modelmentioning

confidence: 99%

Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study

Medina-Bailón

Sampedro

Padilla

et al. 2018

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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As device dimensions are scaled down, the use of strained channels as performance booster becomes of special relevance. Moreover, the inclusion of quantum effects in the transport direction is imperative to predict the performance of future transistors. In particular, Source-to-Drain tunneling (S/D tunneling) is presented as a scaling limit in sub-10nm nodes. In this work, a Multi-Subband Ensemble Monte Carlo (MS-EMC) study of the impact of S/D tunneling in relaxed and biaxially strained channel FinFETs is presented.

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MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections

Cited by 11 publications

References 14 publications

Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator

Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator

Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices

Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study

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