Multi-Chip IGBT Module Failure Monitoring Based on Module Transconductance with Temperature Calibration

Abstract

The Insulated Gate Bipolar Transistor (IGBT) is the component with the highest failure rate in power converters, and its reliability is a critical issue in power electronics. IGBT module failure is largely caused by solder layer fatigue or bond wires fall-off. This paper proposes a multi-chip IGBT module failure monitoring method based on the module transconductance, which can accurately monitor IGBT module chip failures and bond wire failures. The paper first introduces the failure mechanism and module structure of the multi-chip IGBT module; then, it proposes a reliability model based on the module transconductance and analyzes the relationship between chip failure, bond wire failure, and the transmission characteristic curve of the IGBT module. Finally, the module transconductance under chip failure and bond wire failure is measured and calculated through simulation, and the temperature is calibrated, which can eliminate the influence of temperature on health monitoring. The results show that the method has a high sensitivity to chip failures and bond wire failures, can realize the failure monitoring of multi-chip IGBT modules, and is of great significance for improving the reliability of power converters.

Power Devices Health Condition Monitoring: A Review of Recent Papers

“…The purpose of on-line health condition monitoring of IGBT is to extract health status during regular operation of the (Sun, Gong, Du, Peng, Wang & Zhou, 2017) Saturation voltage drop Vce_sat (Avenas, Dupont, Baker, Zara & Barruel, 2015), (Singh, Anurag & Anand, 2017), (Schubert & De Doncker, 2020) Transconductance gm (Wang C., He, Wang, Li & Wu, 2020), (Wang K., Zhou, Sun & Du, 2020) On-resistance RCE(on) (Eleffendi, & Johnson, 2017) b) "transient" Parameter references dynamic change of gate current (Zhou, Zhou & Sun, 2013) peak gate current value IGpeak (Zhou et al, 2013), (Mandeya, Chen, Pickert, Naayagi & Ji, 2019) Voltage change rate dVce/dt , (Kexin, Mingxing, Linlin & Jian, 2014) Gate-emitter voltage change ΔVge (Hu Z., Ge, Xie, Zhang, Yao, Dai & Yang, 2019) Miller plateau duration (Hu Z. et al, 2019) Gate emitter threshold or pre-threshold voltage VGE(th) (Mandeya, Chen, Pickert & Naayagi, 2018), (Mandeya et al, 2019) Current rate of change dIc/dt (Sathik, Prasanth, Sasongko & Pou, 2019) c) Temperature based Parameter references Case temperature (Wang, Tian, Qiao, & Qu, 2016) junction temperature variation (Tian, Qiao, Wang, Gachovska, & Hudgins, 2014) estimation of thermal resistance between junction and ambient Rthja (Hu Z., Du & Wei, 2017), (Zhang J. et al, 2019a) Vce(on)…”

“…The majority of the failure mechanisms encountered in power modules using semiconductor devices (IGBT, diodes or MOSFETS) are related to adjustment of interconnection structures and are driven by thermo-mechanical stresses (Ciappa, 2002). Figure 1 illustrates some degradations caused by thermal cycles, adapted from (Choi, Blaabjerg & Jørgensen, 2018;Ibrahim, Khatir, Ousten, Lallemand, Degrenne & Ingrossi, 2020;Wang, C., Li & Wu, 2020). Depending on the amplitude of stress (ΔT) and dynamics (duty cycles) of power cycling different failure mechanisms are triggered independently (Baker, Liserre, Dupont & Avenas, 2014;Smet, Forest, Huselstein, Richardeau, Khatir, Lefebvre & Berkani 2011).…”

Junction Temperature Prediction of Insulated-Gate Bipolar Transistors in Wind Power Systems Based on an Improved Honey Badger Algorithm

“…The main causes of the chip damage are electrical overstress [13], high temperature, electrostatic damage, latch-up effects, and metal reconstruction, which are mostly related to temperature increases. The package damage includes fracture and detachment of bonding wires [14] and fatigue of solder layers [15]. The essential reason for package damage is material fatigue, which is mainly caused by temperature increases.…”

Temperature Control Concept for Parallel IGBT Operation

“…This idea is even more interesting because the transistor reliability and lifespan directly depend on IGBT's operation temperature [26]. Moreover, IGBTs have among the highest failure rates of components in power electronic converters due to temperature fluctuation, as proposed by Wang in [27]. Thus, the stable operation temperature of every transistor is important for the reliability of converters with parallel IGBTs implemented.…”