The great diversity of electronic properties of graphene [1,2] can be addressed and fine-tuned by direct chemical manipulation [3]. In particular, charged impurities that contribute to surface doping and limit mobility by Coulomb interaction [4,5] can be removed [6,7]. Here we investigate the electronic properties of graphene on hydrophobic substrates, specifically the reduction of short-rangescattering and its association with the many-body electronelectron interaction (EEI) based FQHE [8][9][10][11][12].Graphene was deposited via mechanical cleavage [13] onto a thermally grown SiO 2 surface functionalized with noctadecyltrichlorosilan (OTS) [14,15] or hexamethyldisilizane (HMDS) [6] on a degeneratively doped Si substrate that serves as back gate (cf. Supporting Information, online at: www.pss-rapid.com, for electrical contacting). Raman microscopy [16,17] indicated that the hydrophobic layers considerably reduce the substrate doping (cf. Supporting Information). We demonstrate that a hydrophobic layer between substrate and graphene largely eliminates Coulomb interaction between the graphene monolayer and charged impurities on the substrate, significantly reducing short-range scattering. At high carrier concentrations the mobilities thus obtained, deliver a ratio of Coulomb scattering mean free path to average charge carrier separation comparable to that of the highest mobility samples that exhibit the fractional quantum Hall effect (FQHE). We observe the FQHE in the lowest mobility samples reported up to now and conclude that increasing the ratio of Coulomb scattering mean free path to charge carrier separation overcomes the limitations for the observation of the FQHE imposed by overall mobility.