Multi-decade GaN HEMT Cascode-distributed power amplifier with baseband performance

Kobayashi, K.W.; Chen, Yaochung; Smorchkova, I.; Heying, B.; Luo, Wen; Sutton, W.; Wójtowicz, M.; Oki, A.K.

doi:10.1109/rfic.2009.5135560

Cited by 43 publications

(6 citation statements)

References 6 publications

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“…In this letter, the first GaN MMIC LNA not using distributed architecture to surpass 20 GHz bandwidth is reported. To the authors' best knowledge, this amplifier has the largest flat-gain bandwidth with good input and output matching over the entire bandwidth among all GaN MMIC LNA reported to date, with lower power consumption than previously reported DAs in [3].…”

Section: Introductionmentioning

confidence: 79%

“…Distributed architecture can simultaneously obtain multi-octave GHz bandwidth and two-port matching with the price of large power and area consumption. The widest bandwidth DAs were demonstrated by Kobayashi et al [3]. Recently, several resistive-feedback GaN monolithic microwave integrated circuits (MMIC) LNAs with wide bandwidth, low noise figure and much lower power and area consumption were reported [4]- [6].…”

Section: Introductionmentioning

confidence: 99%

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A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier

Chen

Sutton

Smorchkova

et al. 2010

IEEE Microw. Wireless Compon. Lett.

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This letter presents an ultra-wideband low noise amplifier (LNA) using gallium-nitride (GaN) high-electron mobility transistors (HEMT) technology. A 3 dB bandwidth of 1-25 GHz with 13 dB peak power gain is achieved using a modified resistive-feedback topology. To obtain such a wide bandwidth, several bandwidth enhancement techniques are utilized. An inductor connected to the source of the input transistor ensures good input matching ( 11 9 dB) across the entire bandwidth. The shunt feedback loop and the inductive source degeneration minimize all the required inductor values. This GaN HEMT LNA is believed to have the widest bandwidth among all GaN HEMT monolithic microwave integrated circuit (MMIC) LNAs reported to date. With 3.3 dB minimum noise figure (F), 33.5 dBm maximum output-referred third-order intercept point (OIP3), 20 dBm maximum output-referred 1 dB compression point (Output P1 dB), this MMIC amplifier is comparable in performance to distributed amplifiers (DAs) but with significantly lower power consumption and smaller area. Index Terms-GaN, low noise amplifier (LNA), resistive feedback, wideband.

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Section: Introductionmentioning

confidence: 79%

Section: Introductionmentioning

confidence: 99%

A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier

Chen

Sutton

Smorchkova

et al. 2010

IEEE Microw. Wireless Compon. Lett.

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“…In a conventional TWA (or uniform TWA), all cells are the same, all input transmission lines in between cells (L g1 ..L gn ) have same width and length, same thing applies for output lines (L d1 ..L dn ) and both input and output lines should be terminated by a resistor with a value of 25Ω in our case (would be 50Ω for a conventional TWA). If these conditions are met then the amplifier is optimized in terms of small-signal gain and gain flatness as in [5]. However, as described in [6] when trying to optimize the TWA in terms of output power and PAE, nonuniform topologies should be concerned.…”

Section: A Architecture and Parameters Optimizationmentioning

confidence: 99%

A 39.7 dBm and 18.5% PAE compact X to Ku band GaN Travelling Wave Amplifier

Dupuy

Kerhervé

Deltimple

et al. 2014

2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS)

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This article presents an 8GHz to 18GHz Travelling Wave Amplifier (TWA) averaging 39.7dBm of output power and 18.5% Power Added Efficiency (PAE). At 11 GHz, the TWA reaches a peak output power 40.4dBm and a peak PAE of 22%. The proposed architecture consists in the combination of two TWAs in parallel to increase output power. An innovative low loss compact power combiner is proposed to reduce the overall die size and keep high PAE. The amplifier presented here has the advantage to be very compact compared to similar MMICs High Power Amplifiers (HPA). An innovative design methodology based on a strong correlation between the amplifier and the combiner design is introduced.

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“…In order to obtain higher gain while reducing the gain roll-off characteristics at the high frequency end, many improved structures of DAs have been proposed such as matrix distributed amplifier, 5 cascade distributed amplifier, 6 and cascode distributed amplifier. [7][8][9][10][11] The matrix DAs have a large chip area, a large parasitic capacitance, and a low cut-off frequency. Cascade DAs have a gain limit because of impedance mismatch between the two transistors.…”

Section: Introductionmentioning

confidence: 99%

An ultra‐wideband distributed amplifier MMICs based on 0.15‐um GaAs pHEMT technology

Yang

Wang

et al. 2019

Int J Numerical Modelling

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A DC-30GHz ultra-wideband distributed amplifier based on the 0.15-um GaAs process is proposed and characterized. The distributed amplifier has nine power amplifying units with a cascode structure. The measured results show that the amplifier has 16-dB gain in the frequency range of DC-30GHz.The output power of 1-dB compression point is 19 dBm at 10 GHz, and the saturated output power is 25 dBm. The chip size is 3× 1.2 mm.

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Multi-decade GaN HEMT Cascode-distributed power amplifier with baseband performance

Cited by 43 publications

References 6 publications

A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier

A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier

A 39.7 dBm and 18.5% PAE compact X to Ku band GaN Travelling Wave Amplifier

An ultra‐wideband distributed amplifier MMICs based on 0.15‐um GaAs pHEMT technology

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